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LIGHT EMITTING DIODE CHIP HAVING WAVELENGTH CONVERTING LAYER AND METHOD OF FABRICATING THE SAME, AND PACKAGE HAVING THE LIGHT EMITTING DIODE CHIP AND METHOD OF FABRICATING THE SAME

  • US 20140151633A1
  • Filed: 02/05/2014
  • Published: 06/05/2014
  • Est. Priority Date: 05/18/2010
  • Status: Active Grant
First Claim
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1. A light-emitting diode (LED) chip, comprising:

  • a semiconductor stacked structure comprising a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer;

    a first electrode disposed on the semiconductor stacked structure;

    a wavelength converting layer disposed on the semiconductor stacked structure; and

    a transparent resin disposed on the wavelength converting layer.

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