LIGHT EMITTING DIODE CHIP HAVING WAVELENGTH CONVERTING LAYER AND METHOD OF FABRICATING THE SAME, AND PACKAGE HAVING THE LIGHT EMITTING DIODE CHIP AND METHOD OF FABRICATING THE SAME

• US 20140151633A1
• Filed: 02/05/2014
• Published: 06/05/2014
• Est. Priority Date: 05/18/2010
• Status: Active Grant

• Current Assignee: Seoul Semiconductor Co., Ltd.
• Original Assignee: Seoul Semiconductor Co., Ltd.
• Inventors: JUNG, Jung Hwa, KIM, Bang Hyun
• Granted Patent: US 9,419,186 B2
• Time in Patent Office: Days
• US Class Current: 257/13
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/50 Wavelength conversion elements
• CPC Class Codes: H01L 33/505 characterised by the shape, e.g. plate or foil
• CPC Class Codes: H01L 33/56 Materials, e.g. epoxy or silicone resin

Abstract

An exemplary embodiment of the present invention discloses a light-emitting diode (LED) chip including a semiconductor stacked structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, a first electrode disposed on the semiconductor stacked structure, a wavelength converting layer disposed on the semiconductor stacked structure, and a transparent resin disposed on the wavelength converting layer.

Claims

1. A light-emitting diode (LED) chip, comprising:

a semiconductor stacked structure comprising a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer;

a first electrode disposed on the semiconductor stacked structure;

a wavelength converting layer disposed on the semiconductor stacked structure; and

a transparent resin disposed on the wavelength converting layer.

2. The LED chip of claim 1, further comprising a first spacer layer disposed between the semiconductor stacked structure and the wavelength converting layer.

3. The LED chip of claim 2, wherein the transparent resin has a hardness higher than a hardness of the first spacer layer.

4. The LED chip of claim 1, wherein the transparent resin is a material selected from the group consisting of TiO₂, SiO₂, and Y₂O₃.

5. The LED chip of claim 2, further comprising a second spacer layer disposed between the first spacer layer and the semiconductor stacked structure.

6. The LED chip of claim 5, further comprising a transparent conductive layer disposed between the second spacer layer and the semiconductor stacked structure.

7. The LED chip of claim 1, further comprising a distributed Bragg reflector (DBR), wherein the substrate is disposed between the semiconductor stacked structure and the DBR.

8. The LED chip of claim 7, further comprising a metal layer, wherein the DBR is disposed between the substrate and the metal layer.

9. The LED chip of claim 1, further comprising:

a first electrode electrically connected with the first conductivity-type semiconductor layer; and

a second electrode electrically connected with the second conductivity-type semiconductor layer,

wherein a top surface of the first electrode is positioned at a lower height than a top surface of the second electrode.

10. The LED chip of claim 1, further comprising:

a first electrode electrically connected with the first conductivity-type semiconductor layer; and

a second electrode electrically connected with the second conductivity-type semiconductor layer,

wherein a top surface of the first electrode is positioned at the same height as a top surface of the second electrode.

11. A light-emitting diode (LED) package, comprising:

a mount; and

an LED chip disposed on the mount, wherein the LED chip comprises;

a semiconductor stacked structure comprising a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer;

a first electrode disposed on the semiconductor stacked structure;

a wavelength converting layer disposed on the semiconductor stacked structure; and

a transparent resin disposed on the wavelength converting layer.

12. The LED package of claim 11, wherein the mount comprises a printed circuit board, a lead frame, or a ceramic substrate.

13. The LED package of claim 12, wherein the mount further comprises lead terminals, wherein the lead terminals are electrically connected with the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer.

14. The LED package of claim 11, wherein the transparent resin is a material selected from the group consisting of TiO₂, SiO₂, and Y₂O₃.