LATERAL SEMICONDUCTOR LIGHT EMITTING DIODES HAVING LARGE AREA CONTACTS
First Claim
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1. A light emitting diode (LED) comprising:
- a diode region having first and second opposing faces and including therein an n-type layer and a p-type layer;
at least one dielectric layer on said first face;
a first metal layer on said first face and comprising a portion that passes through said at least one dielectric layer to electrically connect said first metal layer to said p-type layer;
a second metal layer on said first face and comprising a portion that passes through said at least one dielectric layer to electrically connect said second metal layer to said n-type layer; and
a transparent contact between said first metal layer and said diode region.
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Abstract
Light emitting diodes include a diode region having first and second opposing faces that include therein an n-type layer and a p-type layer, an anode contact that ohmically contacts the p-type layer and extends on the first face, and a cathode contact that ohmically contacts the n-type layer and also extends on the first face. The anode and cathode contacts extend on the first face to collectively cover substantially all of the first face. A small gap may be provided between the contacts.
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Citations
39 Claims
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1. A light emitting diode (LED) comprising:
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a diode region having first and second opposing faces and including therein an n-type layer and a p-type layer; at least one dielectric layer on said first face; a first metal layer on said first face and comprising a portion that passes through said at least one dielectric layer to electrically connect said first metal layer to said p-type layer; a second metal layer on said first face and comprising a portion that passes through said at least one dielectric layer to electrically connect said second metal layer to said n-type layer; and a transparent contact between said first metal layer and said diode region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24)
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25. A light emitting diode (LED) comprising:
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a diode region having first and second opposing faces and including therein an n-type layer and a p-type layer; an anode pad that electrically contacts said p-type layer and extends on the first face; a cathode pad that electrically contacts the n-type layer and also extends on the first face, such that a gap is defined that extends along the first face between the anode and cathode pads; and a filling layer in the gap. - View Dependent Claims (26, 27, 28)
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29. A light emitting diode (LED) comprising:
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an n-type semiconductor layer; a p-type semiconductor layer; an anode contact electrically contacting said p-type layer; a cathode contact electrically contacting said n-type layer and electrically isolated from said anode; wherein said cathode contact overlaps said anode contact and contacts said n-type layer. - View Dependent Claims (30, 31, 32, 33, 34, 35, 36, 37, 38, 39)
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Specification