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SUBSTRATE-TEMPLATED EPITAXIAL SOURCE/DRAIN CONTACT STRUCTURES

  • US 20140151757A1
  • Filed: 12/03/2012
  • Published: 06/05/2014
  • Est. Priority Date: 12/03/2012
  • Status: Abandoned Application
First Claim
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1. A method of forming a semiconductor structure comprising:

  • forming at least one semiconductor material portion on a single crystalline dielectric layer;

    forming a gate electrode straddling said at least one semiconductor material portion; and

    forming a contiguous single crystalline semiconductor portion directly on an end subportion of each of said at least one semiconductor material portion by depositing a semiconductor material in epitaxial alignment with said single crystalline dielectric layer.

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