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NAND FLASH MEMORY WITH VERTICAL CELL STACK STRUCTURE AND METHOD FOR MANUFACTURING SAME

  • US 20140151774A1
  • Filed: 03/14/2013
  • Published: 06/05/2014
  • Est. Priority Date: 12/04/2012
  • Status: Active Grant
First Claim
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1. A method of manufacturing flash memory with a vertical cell stack structure, the method comprising:

  • forming source lines in a cell area of a substrate having an ion-implanted well and forming an alignment mark relative to the source lines, the alignment mark being formed in the substrate outside the cell area of the substrate;

    after formation of the source lines, forming cell stacking layers; and

    after forming the cell stacking layers, forming cell pillars in the cell stacking layers at locations relative to the previously formed source lines using the alignment mark to correctly locate the cell pillars.

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