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METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

  • US 20140154837A1
  • Filed: 12/02/2013
  • Published: 06/05/2014
  • Est. Priority Date: 12/03/2012
  • Status: Active Grant
First Claim
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1. A method for manufacturing a semiconductor device comprising the steps of:

  • forming an oxide film over a substrate;

    adding oxygen to the oxide film;

    forming an oxide semiconductor film over the oxide film after adding oxygen to the oxide film;

    performing heat treatment;

    etching part of the oxide film and part of the oxide semiconductor film;

    forming a pair of electrodes over the oxide semiconductor film after etching the part of the oxide film and the part of the oxide semiconductor film;

    forming a gate insulating film over the oxide semiconductor film and the pair of electrodes; and

    forming a gate electrode over the gate insulating film.

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