MICROWAVE RADIATION ANTENNA, MICROWAVE PLASMA SOURCE AND PLASMA PROCESSING APPARATUS

• US 20140158302A1
• Filed: 12/03/2013
• Published: 06/12/2014
• Est. Priority Date: 12/10/2012
• Status: Active Grant

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: IKEDA, Taro, KOMATSU, Tomohito, KASAI, Shigeru, OSADA, Yuki, FUJINO, Yutaka, MIYASHITA, Hiroyuki, TANIHARA, Akira
• Granted Patent: US 9,548,187 B2
• Time in Patent Office: Days
• US Class Current: 156/345.41
• CPC Class Codes: H01J 37/32201 Generating means
• CPC Class Codes: H01J 37/3222 Antennas

Abstract

A microwave radiation antenna includes an antenna body having a microwave radiation surface; a processing gas inlet configured to introduce a processing gas into the antenna body; a gas diffusion space configured to diffuse the processing gas in the antenna body; a plurality of gas outlets provided in the antenna body and configured to discharge the processing gas into the chamber; a plurality of slots provided in the antenna body under a state where the slots are separated from the gas diffusion space and the gas outlets; and an annular dielectric member provided in the microwave radiation surface side of the antenna body to cover a slot formation region where the slots are formed. A metal surface wave is formed in the microwave radiation surface by the microwave radiated through the slots and the annular dielectric member and a surface wave plasma is generated by the metal surface wave.

Claims

1. A microwave radiation antenna that radiates a microwave generated in a microwave generation mechanism and transmitted through a microwave transmission line into a chamber in a plasma processing apparatus, the plasma processing apparatus forming a surface wave plasma in the chamber to perform plasma processing, the antenna comprising:

an antenna body having a microwave radiation surface, and made of conductive material;

a processing gas inlet configured to introduce a processing gas into the antenna body;

a gas diffusion space configured to diffuse the processing gas in the antenna body;

a plurality of gas outlets provided in the antenna body, and configured to discharge the processing gas diffused in the gas diffusion space into the chamber;

a plurality of slots provided, corresponding to the microwave transmission line, in the antenna body under a state where the slots are separated from the gas diffusion space and the gas outlets, each of the slots being configured to radiate the microwave from an end portion disposed at the microwave radiation surface side; and

an annular dielectric member provided in the microwave radiation surface side of the antenna body to cover a slot formation region where the slots are formed,

wherein a metal surface wave is formed in the microwave radiation surface by the microwave radiated through the slots and the annular dielectric member and a surface wave plasma is generated by the metal surface wave.

2. The microwave radiation antenna of claim 1, wherein the plurality of gas outlets is formed in both of outer and inner regions of the annular dielectric member in the microwave radiation surface of the antenna body.

3. The microwave radiation antenna of claim 1, wherein a seal is provided between the annular dielectric member and the slots of the antenna body.

4. The microwave radiation antenna of claim 3, wherein the seal between the annular dielectric member and the slots of the antenna body is a vacuum seal and a vacuum atmosphere region in the chamber and an atmospheric atmosphere region including the slots are partitioned by the vacuum seal.

5. The microwave radiation antenna of claim 1, wherein the annular dielectric member is inserted into a concave portion formed in the microwave radiation surface of the antenna body.

6. A microwave plasma source that generates a surface wave plasma by radiating a microwave into a chamber of a plasma processing apparatus, comprising:

a microwave output unit configured to generate and output the microwave; and

a microwave supply unit configured to transmit the microwave output from the microwave output unit and radiate the microwave into the chamber,

wherein the microwave supply unit includes the microwave radiation antenna of claim 1.

7. The microwave plasma source of claim 6, wherein the microwave supply unit includes a plurality of microwave radiation parts connected to the microwave radiation antenna, each of the microwave radiation parts having a microwave transmission line, and the microwave radiation antenna includes a plurality of slots for each of the plurality of microwave radiation parts.

8. A plasma processing apparatus comprising:

a chamber configured to accommodate a substrate to be processed;

a gas supplying mechanism configured to supply a processing gas; and

the microwave plasma source of claim 6,

wherein a metal surface wave is formed on a surface of the microwave radiation antenna by the microwave supplied from the microwave radiation antenna of the microwave plasma source into the chamber,

wherein a surface wave plasma of a gas supplied from the gas supplying mechanism is generated by the metal surface wave, and

wherein the substrate in the chamber is processed by the plasma.