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NITRIDE SEMICONDUCTOR ULTRAVIOLET LIGHT-EMITTING ELEMENT

  • US 20140158983A1
  • Filed: 08/09/2011
  • Published: 06/12/2014
  • Est. Priority Date: 08/09/2011
  • Status: Active Grant
First Claim
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1. A nitride semiconductor ultraviolet light-emitting element comprising:

  • an underlying structure portion including a sapphire (0001) substrate and an AlN layer formed on a (0001) surface of the substrate; and

    a light-emitting element structure portion including an n-type cladding layer of an n-type AlGaN based semiconductor layer, an active layer having an AlGaN based semiconductor layer, and a p-type cladding layer of a p-type AlGaN based semiconductor layer, the light-emitting element structure portion formed on a crystal surface of the underlying structure portion,wherein the (0001) surface of the substrate is inclined at an off angle which is equal to or greater than 0.6° and

    is equal to or smaller than 3.0°

    , andan AlN molar fraction of the n-type cladding layer is equal to or higher than 50%.

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