ACTIVE MATRIX ORGANIC LIGHT EMITTING DIODE PANEL AND METHOD FOR MANUFACTURING THE SAME

• US 20140159004A1
• Filed: 11/21/2013
• Published: 06/12/2014
• Est. Priority Date: 12/07/2012
• Status: Active Grant

• Current Assignee: Shanghai Tianma Micro-Electronics Company Limited (Tianma Microelectronics Company Limited)
• Original Assignee: Shanghai Tianma Micro-Electronics Company Limited (Tianma Microelectronics Company Limited)
• Inventors: XIONG, Zhiyong, ZHAO, Bengang
• Granted Patent: US 9,627,447 B2
• Time in Patent Office: Days
• US Class Current: 257/40
• CPC Class Codes: H10K 59/124 Insulating layers formed between TFT elements and OLED elements
• CPC Class Codes: H10K 59/35 comprising red-green-blue [RGB] subpixels
• CPC Class Codes: H10K 59/352 the areas of the RGB subpixels being different

Abstract

The invention discloses an active matrix organic light emitting diode panel and a method for manufacturing the same. The active matrix organic light emitting diode panel includes a substrate, an organic film formed on the substrate, and a plurality of red, green and blue organic light emitting diodes formed on the organic film. A recess or protrusion is formed in the organic film in a region corresponding to the blue organic light emitting diode. The blue organic light emitting diode is formed on the recess or protrusion, and the surface area of the recess or protrusion is larger than the area of the surface where the red or green organic light emitting diodes contacts the organic film.

Claims

1. An active matrix organic light emitting diode panel, comprising:

a substrate;

an organic film formed on the substrate; and

a plurality of red, green and blue organic light emitting diodes formed on the organic film;

wherein, a recess or protrusion is formed in the organic film in a region corresponding to the blue organic light emitting diode, the blue organic light emitting diode is formed on the recess or protrusion, and a surface area of the recess or protrusion is larger than the area of the surface where the red organic light emitting diode or the green organic light emitting diode contacts the organic film.

2. The active matrix organic light emitting diode panel according to claim 1, wherein the area of the surface where the red organic light emitting diode contacts the organic film is equal to the area of the surface where the green organic light emitting diode contacts the organic film.

3. The active matrix organic light emitting diode panel according to claim 1, wherein an opening area of the recess is less than or equal to the area of the surface where the red organic light emitting diode or the green organic light emitting diode contacts the organic film.

4. The active matrix organic light emitting diode panel according to claim 2, wherein an opening area of the recess is less than or equal to the area of the surface where the red organic light emitting diode or the green organic light emitting diode contacts the organic film.

5. The active matrix organic light emitting diode panel according to claim 1, wherein a bottom surface area of the protrusion is less than or equal to the area of the surface where the red organic light emitting diode or the green organic light emitting diode contacts the organic film.

6. The active matrix organic light emitting diode panel according to claim 2, wherein a bottom surface area of the protrusion is less than or equal to the area of the surface where the red organic light emitting diode or the green organic light emitting diode contacts the organic film.

7. The active matrix organic light emitting diode panel according to claim 1, wherein the recess is wedge-shaped, W-shaped or hemispherical.

8. The active matrix organic light emitting diode panel according to claim 1, wherein the protrusion is wedge-shaped, M-shaped or hemispherical.

9. The active matrix organic light emitting diode panel according to claim 3, wherein a depth of the recess is less than or equal to a thickness of the organic film.

10. A method for manufacturing an active matrix organic light emitting diode panel, comprising:

providing a substrate;

forming an organic film on the substrate;

exposing the organic film with a gray-tone mask;

etching to remove part of the organic film and forming a plurality of recesses or protrusions on the organic film; and

forming a plurality of red, green and blue organic light emitting diodes on the organic film;

wherein the blue organic light emitting diode is formed on the recess or protrusion, and a surface area of the recess or the protrusion is larger than or equal to the area of the surface where the red organic light emitting diode or the green organic light emitting diode contacts the organic film.

11. The method for manufacturing the active matrix organic light emitting diode panel according to claim 10, wherein the area of the surface where the red organic light emitting diode contacts the organic film is equal to the area of the surface where the green organic light emitting diode contacts the organic film.

12. The method for manufacturing the active matrix organic light emitting diode panel according to claim 10, wherein an opening area of the recess is less than or equal to the area of the surface where the red organic light emitting diode or the green organic light emitting diode contacts the organic film.

13. The method for manufacturing the active matrix organic light emitting diode panel according to claim 11, wherein an opening area of the recess is less than or equal to the area of the surface where the red organic light emitting diode or the green organic light emitting diode contacts the organic film.

14. The method for manufacturing the active matrix organic light emitting diode panel according to claim 10, wherein a bottom surface area of the protrusion is less than or equal to the area of the surface where the red organic light emitting diode or the green organic light emitting diode contacts the organic film.

15. The method for manufacturing the active matrix organic light emitting diode panel according to claim 11, wherein a bottom surface area of the protrusion is less than or equal to the area of the surface where the red organic light emitting diode or the green organic light emitting diode contacts the organic film.

16. The method for manufacturing the active matrix organic light emitting diode panel according to claim 10, wherein the recess is wedge-shaped, W-shaped or hemispherical.

17. The method for manufacturing the active matrix organic light emitting diode panel according to claim 10, wherein the protrusion is wedge-shaped, M-shaped or hemispherical.

18. The method for manufacturing the active matrix organic light emitting diode panel according to claim 10, wherein a depth of the recess is less than or equal to a thickness of the organic film.

19. The method for manufacturing the active matrix organic light emitting diode panel according to claim 10, wherein, before forming the organic film on the substrate, the method further comprises:

forming a plurality of thin-film transistors on the substrate; and

forming a passivation layer on the thin-film transistor.