LIGHT-EMITTING ELEMENT

• US 20140159091A1
• Filed: 12/06/2013
• Published: 06/12/2014
• Est. Priority Date: 12/07/2012
• Status: Active Grant

• Current Assignee: Epistar Corporation
• Original Assignee: Epistar Corporation
• Inventors: HON, Schang-Jing, CHEN, Chao-Hsing, KO, Tsun-Kai, SHEN, Chien-Fu, WANG, Jia-Kuen, CHEN, Hung-Che
• Granted Patent: US 9,076,946 B2
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/24 of the light emitting region, e.g. non-planar junction
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/387 with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/54 having a particular shape
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A light-emitting element comprises: a light-emitting semiconductor stack comprising a first semiconductor layer; a second semiconductor layer on the first semiconductor layer; and a light-emitting layer between the first semiconductor layer and the second semiconductor layer; a first electrode on the first semiconductor layer; a first protection layer on the light-emitting semiconductor stack and comprising a first through hole; and a conductive contact layer on the first protection layer and electrically connected to the first electrode through the first through hole.

Claims

1. A light-emitting element, comprising:

a light-emitting semiconductor stack comprising;

a first semiconductor layer;

a second semiconductor layer on the first semiconductor layer; and

a light-emitting layer between the first semiconductor layer and the second semiconductor layer;

a first electrode on the first semiconductor layer ;

a first protection layer on the light-emitting semiconductor stack and comprising a first through hole; and

a conductive contact layer on the first protection layer and electrically connected to the first electrode through the first through hole.

2. The light-emitting element according to claim 1, wherein the conductive contact layer further comprises a first conductive part and a second conductive part spatially separated from the first conductive part.

3. The light-emitting element according to claim 2, wherein the conductive contact layer further comprises a distance between the first conductive part and the second conductive part, and the distance is at least 50 μ

m.

4. The light-emitting element according to claim 3, wherein the distance ranges from 70 μ

m to 150 μ

m.

5. The light-emitting element according to claim 2, wherein a surface area of an upper surface of the first conductive part is different from a surface area of an upper surface of the second conductive part.

6. The light-emitting element according to claim 5, wherein the surface area of the upper surface of the first conductive part is smaller than the surface area of the upper surface of the second conductive part, and a height of the first conductive part is larger than a height of the second conductive part.

7. The light-emitting element according to claim 2, wherein a surface area of an upper surface of the first conductive part is equal to a surface area of an upper surface of the second conductive part.

8. The light-emitting element according to claim 7, wherein a height of the first conductive part is equal to a height of the second conductive part.

9. The light-emitting element according to claim 2, further comprising a second electrode between the light-emitting semiconductor stack and the first protection layer, and the first protection layer further comprises a second through hole at a position above the second electrode, wherein the second conductive part is electrically connected to the second electrode through the second through hole.

10. The light-emitting element according to claim 9, further comprising a height balancer between the second conductive part and the first protection layer, wherein the height balancer is connected to the second electrode through the second through hole.

11. The light-emitting element according to claim 2, wherein the first electrode comprises a contact area and the first conductive part is electrically connected to the contact area through the first through hole.

12. The light-emitting element according to claim 2, wherein the first conductive part comprises a first height and the second conductive part comprises a second height substantially equal to the first height.

13. The light-emitting element according to claim 2, further comprising a height balancer is between the first conductive part and the first protection layer, wherein the height balancer is connected to the first electrode through the first through hole.

14. The light-emitting element according to claim 2, wherein a ratio of a surface area of an upper surface of the first conductive part to a surface area of an upper surface of the second conductive part ranges from 0.8 to 1.2.

15. The light-emitting element according to claim 2, wherein the first conductive part comprises a first width and the second conductive part comprises a second width, wherein a ratio of the first width to the second width ranges from 0.8 to 1.2.

16. The light-emitting element according to claim 1, further comprising a second protection layer between the light-emitting semiconductor stack and the first protection layer, wherein the first protection layer covers and surrounds the second protection layer.

17. The light-emitting element according to claim 16, further comprising a reflective layer on the second protection layer.

18. The light-emitting element according to claim 17, further comprising a barrier layer on the reflective layer and covering and surrounding the reflective layer.

19. The light-emitting element according to claim 16, wherein the first electrode comprises a contact area and an extension area extending outwardly from the contact area, and the extension area is between the light-emitting semiconductor stack and the second protection layer.

20. The light-emitting element according to claim 1, wherein the light-emitting semiconductor stack, the first electrode, the first protection layer or the conductive contact layer comprises an upper face, a lower face opposite to the upper face, a side face between the upper face and the lower face, and an angle between the side face and the lower face, wherein the angle ranges from 15 degrees to 70 degrees.