Through Substrate Features in Semiconductor Substrates
First Claim
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1. A semiconductor device comprising:
- a through substrate via disposed in a first region of a semiconductor substrate; and
a through substrate conductor coil disposed in a second region of the semiconductor substrate.
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Abstract
Through substrate features in semiconductor substrates are described. In one embodiment, the semiconductor device includes a through substrate via disposed in a first region of a semiconductor substrate. A through substrate conductor coil is disposed in a second region of the semiconductor substrate.
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Citations
25 Claims
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1. A semiconductor device comprising:
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a through substrate via disposed in a first region of a semiconductor substrate; and a through substrate conductor coil disposed in a second region of the semiconductor substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A semiconductor device comprising:
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a first through substrate opening within a semiconductor substrate, the first through substrate opening extending from a bottom surface of the semiconductor substrate to an opposite top surface of the semiconductor substrate, wherein, in a plane parallel to the bottom surface, the first through substrate opening includes a ring shaped through substrate trench opening extending around a central region, wherein the ring shaped through substrate trench opening extends from the bottom surface of the semiconductor substrate to the top surface of the semiconductor substrate; an insulating material lining sidewalls of the first through substrate opening; and a conductive material at least partially filling the first through substrate opening. - View Dependent Claims (12, 13, 14, 15, 16)
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17. A semiconductor device comprising:
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a first, a second, and a third through substrate openings disposed within a semiconductor substrate, the first through substrate opening being disposed at least partially around the second through substrate opening, the first, the second, and the third through substrate openings extending from a bottom surface of a semiconductor substrate to an opposite top surface of the semiconductor substrate; a first liner disposed within the first through substrate opening; a second liner disposed within the second through substrate opening; a third liner disposed within the third through substrate opening; an insulating material lining the first, the second, and the third through substrate openings; and a conductive material at least partially filling the first and the third through substrate openings to form a portion of an inductor and a portion of a through substrate via. - View Dependent Claims (18, 19, 20, 21, 22)
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23. A semiconductor device comprising:
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a first through substrate opening within a semiconductor substrate, the first through substrate opening extending from a bottom surface of the semiconductor substrate to an opposite top surface of the semiconductor substrate; an insulating material lining sidewalls of the first through substrate opening; a coil for an inductor disposed in the semiconductor substrate, the coil comprising a conductive material at least partially filling the first through substrate opening, wherein the inductor comprises a central region surrounded by the coil; and a second coil disposed in a metallization layer above the top surface of the semiconductor substrate, the second coil being inductive coupled to the coil. - View Dependent Claims (24, 25)
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Specification