SEMICONDUCTOR MODULE

• US 20140159225A1
• Filed: 08/24/2012
• Published: 06/12/2014
• Est. Priority Date: 08/25/2011
• Status: Active Grant

• Current Assignee: Fuji Electric Company Limited (Fuji Electric Systems Company Limited), Nissan Motor Co., Ltd., Sanken Electric Company Limited
• Original Assignee: Fuji Electric Company Limited (Fuji Electric Systems Company Limited), Nissan Motor Co., Ltd., Sanken Electric Company Limited
• Inventors: Murakami, Yoshinori, Tanimoto, Satoshi, Sato, Shinji, Zushi, Yusuke, Matsui, Kohei
• Granted Patent: US 8,921,998 B2
• Time in Patent Office: Days
• US Class Current: 257/690
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48132 with an intermediate bond, e.g. continuous wire daisy chain
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48235 connecting the wire to a via metallisation of the item
• CPC Class Codes: H01L 2224/4846 with multiple bonds on the same bonding area
• CPC Class Codes: H01L 2224/48472 the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
• CPC Class Codes: H01L 2224/49111 the connectors connecting two common bonding areas, e.g. Litz or braid wires
• CPC Class Codes: H01L 2224/49175 Parallel arrangements
• CPC Class Codes: H01L 23/3735 Laminates or multilayers, e.g. direct bond copper ceramic substrates
• CPC Class Codes: H01L 23/49811 Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads H01L23/49827 takes precedence
• CPC Class Codes: H01L 23/5384 Conductive vias through the substrate with or without pins, e.g. buried coaxial conductors H01L23/5383, H01L23/5385 take precedence; pins attached to insulating substrates H01L23/49811
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/49 of a plurality of wire connectors
• CPC Class Codes: H01L 25/072 the devices being arranged next to each other
• CPC Class Codes: H01L 25/18 the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/10272 : Silicon Carbide [SiC]
• CPC Class Codes: H01L 2924/1033 : Gallium nitride [GaN]
• CPC Class Codes: H01L 2924/1203 : Rectifying Diode
• CPC Class Codes: H01L 2924/1305 : Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13055 : Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/1306 : Field-effect transistor [FET]
• CPC Class Codes: H01L 2924/13062 : Junction field-effect transistor [JFET]
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/207 : Diameter ranges
• CPC Class Codes: H01L 2924/30105 : Capacitance
• CPC Class Codes: H01L 2924/30107 : Inductance
• CPC Class Codes: H01L 2924/3011 : Impedance
• CPC Class Codes: H02M 7/003 : Constructional details, e.g. physical layout, assembly, wiring or busbar connections

Abstract

A semiconductor module has a pair of semiconductor devices, a heat sink, a first electrode, an output electrode and a second electrode. The semiconductor devices are connected in series with each other and have first terminals that are electrically connected to a first power system and a second terminal that is electrically connected to a second power system. The first electrode is electrically connected both to one of the first terminal and to an electrode of one of the semiconductor devices. The output electrode is electrically connected both to the second terminal and to an electrode of the other of the semiconductor device. The second electrode is electrically connected to the other of the first terminals. The second electrode is connected to the heat sink via a first insulating member. The output electrode is connected to the second electrode via a second insulating member.

Claims

1. A semiconductor module comprising:

a first terminal having two terminal sections electrically connected to a first power system, and a second terminal electrically connected to a second power system;

a first semiconductor device having a first electrode section and a second electrode section;

a second semiconductor device having a first electrode section and a second electrode section, the second semiconductor device being connected in series with the first semiconductor device;

a heat sink;

a first electrode electrically connected between one of the two terminal sections of the first terminal and to the first electrode section of the first semiconductor device;

an output electrode electrically connected to each of the second terminal, the second electrode section of the first semiconductor device, and the first electrode section of the second semiconductor device; and

a second electrode electrically connected between the other of the two terminal sections of the first terminal and the second electrode section of the second semiconductor device,

the second electrode being layered to the heat sink via a first insulating member, and

the output electrode being layered to the second electrode via a second insulating member.

2. The semiconductor module according to claim 1, wherein

the first electrode is connected to the second electrode via the second insulating member.

3. The semiconductor module according to claim 1, wherein

the first electrode is connected to the heat sink via the first insulating member, and

an area of the first electrode and an area of the second electrode are substantially identical.

4. The semiconductor module according to claim 1, wherein

the second electrode includes

an electrode formed on the same surface as the output electrode,

an electrode formed on the first insulating member, and

a through hole that connects these two electrodes.

5. The semiconductor module according to claim 2, wherein

the second electrode includes

an electrode formed on the same surface as the output electrode,

an electrode formed on the first insulating member, and

a through hole that connects these two electrodes.

6. The semiconductor module according to claim 3, wherein

the second electrode includes

an electrode formed on the same surface as the output electrode,

an electrode formed on the first insulating member, and

a through hole that connects these two electrodes.