WAFER EXAMINATION DEVICE AND WAFER EXAMIINATION METHOD
First Claim
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1. A wafer examination device, comprising:
- a probe made of a metal which reacts with silicon carbide to produce silicide;
a fusion section which fuses the probe to a silicon carbide wafer as an examined object; and
a measurement section which measures an electrical property of the silicon carbide wafer through the fused probe.
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Abstract
A wafer examination device includes a probe, a fusion section and a measurement section. The probe is made of a metal which reacts with silicon carbide to produce silicide. The fusion section fuses the probe to a silicon carbide wafer as an examined object. The measurement section measures an electrical property of the silicon carbide wafer through the fused probe.
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Citations
11 Claims
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1. A wafer examination device, comprising:
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a probe made of a metal which reacts with silicon carbide to produce silicide; a fusion section which fuses the probe to a silicon carbide wafer as an examined object; and a measurement section which measures an electrical property of the silicon carbide wafer through the fused probe. - View Dependent Claims (2, 3, 4, 5)
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6. A wafer examination method, comprising:
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a fusion step of fusing a probe made of a metal which reacts with silicon carbide to produce suicide to a silicon carbide wafer as an examined object; and an examination step of measuring an electrical property of the silicon carbide wafer through the fused probe. - View Dependent Claims (7, 8, 9, 10, 11)
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Specification