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WAFER EXAMINATION DEVICE AND WAFER EXAMIINATION METHOD

  • US 20140159705A1
  • Filed: 12/09/2013
  • Published: 06/12/2014
  • Est. Priority Date: 12/10/2012
  • Status: Active Grant
First Claim
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1. A wafer examination device, comprising:

  • a probe made of a metal which reacts with silicon carbide to produce silicide;

    a fusion section which fuses the probe to a silicon carbide wafer as an examined object; and

    a measurement section which measures an electrical property of the silicon carbide wafer through the fused probe.

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