TECHNIQUE FOR SELECTIVELY PROCESSING THREE DIMENSIONAL DEVICE
First Claim
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1. A method to selectively process a three dimensional device, comprising:
- providing a substrate having a first surface that extends horizontally, the substrate comprising a fin structure containing a second surface that extends vertically from the first surface;
providing a film on the substrate, the film comprising carbon species; and
etching a selected portion of the film by exposing the selected portion of the film to an etchant containing hydrogen species, the etchant excluding oxygen species and fluorine species.
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Abstract
A method to selectively process a three dimensional device, comprising providing a substrate having a first surface that extends horizontally, the substrate comprising a structure containing a second surface that extends vertically from the first surface; providing a film on the substrate, the film comprising carbon species; and etching a selected portion of the film by exposing the selected portion of the film to an etchant containing hydrogen species, where the etchant excludes oxygen species and fluorine species.
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Citations
19 Claims
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1. A method to selectively process a three dimensional device, comprising:
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providing a substrate having a first surface that extends horizontally, the substrate comprising a fin structure containing a second surface that extends vertically from the first surface; providing a film on the substrate, the film comprising carbon species; and etching a selected portion of the film by exposing the selected portion of the film to an etchant containing hydrogen species, the etchant excluding oxygen species and fluorine species. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method to process a FinFET device, comprising:
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providing a substrate having a first surface that extends horizontally, the substrate comprising a fin structure having a pair of opposed surfaces extending vertically from the first surface; providing a film on the substrate, the film comprising carbon species; etching a selected portion of the film that covers the fin structure by exposing the selected portion of the film to an etchant containing hydrogen species and excluding oxygen species and fluorine species, wherein an exposed fin region is formed on the fin structure; and performing an ion implantation process into the exposed fin region to introduce a dopant at a substrate temperature of greater than 300°
C. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19)
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Specification