SILICON NANO-CRYSTAL BIOSENSOR AND METHOD OF FABRICATING THE SAME

• US 20140163350A1
• Filed: 07/12/2013
• Published: 06/12/2014
• Est. Priority Date: 12/12/2012
• Status: Abandoned Application

• Current Assignee: Electronics and Telecommunications Research Institute
• Original Assignee: Electronics and Telecommunications Research Institute
• Inventors: Huh, Chul, Kim, Sang Hyeob, Park, Byoung-Jun, Chung, Myung-Ae, Jang, Eun Hye
• Application Number:
  US13/941,058
• Publication Number:
  US 20140163350A1
• Time in Patent Office: Days
• US Class Current: 600/395
• CPC Class Codes: A61B 2562/12 Manufacturing methods specially adapted for producing sensors for in-vivo measurements
• CPC Class Codes: A61B 2562/164 the sensor is mounted in or on a conformable substrate or carrier
• CPC Class Codes: A61B 5/0059 using light, e.g. diagnosis by transillumination, diascopy, fluorescence A61B5/0093, A61B5/1455, A61B5/02416 and A61B5/0261 take precedence
• CPC Class Codes: B82Y 15/00 Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
• CPC Class Codes: G01N 21/255 Details, e.g. use of specially adapted sources, lighting or optical systems
• CPC Class Codes: H01L 31/03926 comprising a flexible substrate
• CPC Class Codes: H01L 31/105 the potential barrier being of the PIN type
• CPC Class Codes: H01L 31/167 the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
• CPC Class Codes: H01L 31/18 Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
• CPC Class Codes: Y02E 10/50 Photovoltaic [PV] energy

Abstract

A silicon nano-crystal biosensor includes a flexible substrate transformed depending on a shape of a body organ, a light emitting device disposed on the flexible substrate and emitting light, and a light detector opposite to the light emitting device on the flexible substrate. The light detector absorbs the emitted light. A length of the flexible substrate is substantially equal to or greater than a radius of curvature of the body organ.

Claims

1. A silicon nano-crystal biosensor comprising:

a flexible substrate transformed depending on a shape of a body organ;

a light emitting device disposed on the flexible substrate and emitting light; and

a light detector opposite to the light emitting device on the flexible substrate, the light detector absorbing the emitted light,

wherein a length of the flexible substrate is substantially equal to or greater than a radius of curvature of the body organ.

2. The silicon nano-crystal biosensor of claim 1, wherein the flexible substrate includes a polymer substrate, a liquid crystal polymer substrate, a metal substrate, or a glass substrate.

3. The silicon nano-crystal biosensor of claim 1, wherein the light emitting device includes a hole-injection layer, a light emitting layer, an electron-injection layer, and a device electrode which are sequentially stacked on the flexible substrate.

4. The silicon nano-crystal biosensor of claim 3, wherein the light emitting layer includes silicon carbide (SiC) including a silicon nano-crystal.

5. The silicon nano-crystal biosensor of claim 4, wherein the silicon nano-crystal has a size of about 1 nm to about 10 nm.

6. The silicon nano-crystal biosensor of claim 3, wherein the hole-injection layer and the electron-injection layer include silicon carbide (SiC) or silicon-carbon nitride (SiCN).

7. The silicon nano-crystal biosensor of claim 1, wherein the light detector includes a hole doping layer, a light absorbing layer, an electron doping layer, and a detection electrode which are sequentially stacked on the flexible substrate.

8. The silicon nano-crystal biosensor of claim 7, wherein the light absorbing layer includes silicon carbide (SiC) including a silicon nano-crystal.

9. The silicon nano-crystal biosensor of claim 7, wherein the hole doping layer and the electron doping layer include silicon carbide (SiC) or silicon-carbon nitride (SiCN).

10. A silicon nano-crystal biosensor comprising:

a measuring part having a through region, the measuring part formed of a flexible material;

a light emitting part disposed at a side of the measuring part, the light emitting part emitting light to the measuring part; and

a light detecting part disposed at another side of the measuring part, the light detecting part opposite to the light emitting part, and the light detecting part absorbing the light passing through the through region,

wherein an intensity of the light absorbed in the light detecting part is varied according to a light absorption amount of biomaterials disposed in the through region.

11. The silicon nano-crystal biosensor of claim 10, wherein the measuring part includes a polymer material, a liquid crystal polymer material, a metal material, or a glass material.

12. The silicon nano-crystal biosensor of claim 10, wherein the light emitting part includes silicon carbide (SiC) including a silicon nano-crystal.

13. The silicon nano-crystal biosensor of claim 12, wherein the silicon nano-crystal has a size of about 1 nm to about 10 nm.

14. The silicon nano-crystal biosensor of claim 10, wherein the light detecting part includes silicon carbide (SiC) including a silicon nano-crystal.

15. A method of fabricating a silicon nano-crystal biosensor, the method comprising:

forming a light emitting device and a light detector on a silicon substrate;

separating the light emitting device and the light detector from the silicon substrate; and

bonding the light emitting device and the light detector on a flexible substrate, the light emitting device and light detector spaced apart from each other on the flexible substrate.

16. The method of claim 15, wherein the silicon substrate includes a first silicon substrate and a second silicon substrate;

and

wherein forming the light emitting device and the light detector comprises;

sequentially forming a hole-injection layer, a light emitting layer, an electron-injection layer, and a device electrode on the first silicon substrate; and

sequentially forming a hole doping layer, a light absorbing layer, an electron doping layer, and a detection electrode on the second silicon substrate.

17. The method of claim 16, wherein each of the light emitting layer and the light absorbing layer is formed by a plasma enhanced chemical vapor deposition (PECVD) process using a silane (SiH₄) gas and a methane (CH₄) gas.

18. The method of claim 17, wherein each of the light emitting layer and the light absorbing layer include silicon carbide (SiC) including a silicon nano-crystal.

19. The method of claim 15, wherein the light emitting layer and the light detector are separated from the silicon substrate by a chemical etching process or a physical etching process.