Back-Contact Electron Reflectors Enhancing Thin Film Solar Cell Efficiency

• US 20140166107A1
• Filed: 12/13/2012
• Published: 06/19/2014
• Est. Priority Date: 12/13/2012
• Status: Abandoned Application

• Current Assignee: Intermolecular Incorporated (Merck & Co., Inc.)
• Original Assignee: Intermolecular Incorporated (Merck & Co., Inc.)
• Inventors: Lee, Mankoo, Barabash, Sergey, Chiang, Tony P., Pramanik, Dipankar
• Application Number:
  US13/714,274
• Publication Number:
  US 20140166107A1
• Time in Patent Office: Days
• US Class Current: 136/260
• CPC Class Codes: H01L 31/0322 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
• CPC Class Codes: H01L 31/03923 including AIBIIICVI compound materials, e.g. CIS, CIGS
• CPC Class Codes: H01L 31/056 the light-reflecting means being of the back surface reflector [BSR] type
• CPC Class Codes: H01L 31/0749 including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
• CPC Class Codes: Y02E 10/52 PV systems with concentrators
• CPC Class Codes: Y02E 10/541 CuInSe2 material PV cells

Abstract

Methods for improving the efficiency of solar cells are disclosed. A solar cell consistent with the present disclosure includes a back contact metal layer disposed on a substrate. The solar cell also includes an electron reflector material(s) layer formed on the back contact metal layer and an absorber material(s) layer disposed on the electron reflector material(s) layer. In addition, the solar cell includes a buffer material(s) layer formed on the absorber material(s) layer wherein the electron reflector material(s) layer, absorber material(s) layer, and buffer material(s) layer form a pn junction within the solar cell. Furthermore, a TCO material(s) layer is formed on the buffer material(s) layer. In addition, the front contact layer is formed on the TCO material(s) layer.

Claims

1. A solar cell, comprising:

a first metal layer disposed on a substrate;

a material layer formed above the first metal layer, the material layer operable as an electron reflector layer;

an absorber material layer formed above the material layer;

a buffer material layer formed above to the absorber material layer;

a transparent conductive oxide material layer formed above the buffer material layer; and

a second metal layer formed above the transparent conductive oxide material layer.

2. The solar cell of claim 1, wherein the absorber material layer includes at least one of a CIGS material or a CdTe material.

3. The solar cell of claim 1, wherein the material layer is p⁺-type.

4. The solar cell of claim 1, wherein the buffer material layer is n⁺-type.

5. The solar cell of claim 1, wherein the substrate comprises soda lime glass.

6. The solar cell of claim 1, wherein the material layer comprises at least one of MoSe₂, MoS₂, ZnSnO₃, MoO_x, ZnTe, Cu_xTe, MoTe, or Sb₂Te₃.

7. The solar cell of claim 1, wherein the back contact metal layer comprises at least one of molybdenum, platinum, or gold.

8. The solar cell of claim 1, wherein the transparent conductive oxide material comprises at least one of ZnO or SnO₂F.

9. The solar cell of claim 1, wherein the second metal layer comprises aluminum and nickel.

10. The solar cell of claim 1, wherein the material layer has a wider band gap than the absorber material layer.

11. The solar cell of claim 1, wherein the material layer has an energy band gap in the range of 0.3 to 0.7 electron volts higher than the energy band gap of the absorber material layer.

12. The solar cell of claim 1, wherein the absorber materials layer is an ungraded material.

13. The solar cell of claim 1, wherein the material has an energy band gap height of approximately 1.4 electron volts.

14. The solar cell of claim 1, wherein an ohmic contact is present at an interface between the material layer and the first metal layer.

15. The solar cell of claim 1 further comprising an antireflection coating layer between the second metal layer and the transparent conductive oxide material layer.

16. A method of creating a thin film photovoltaic solar cell, comprising:

forming a first metal layer above a substrate;

forming a material layer above the first metal layer, the material layer operable as an electron reflector layer;

forming an absorber material layer above the material layer;

forming an transparent conductive oxide materials above the buffer material layer; and

forming a second metal layer above the transparent conductive oxide material layer.

17. The method of claim 16, wherein the material is formed by a selenization process.

18. The method of claim 17, wherein the selenization process includes exposing the absorber material layer to at least one of H₂Se, Se vapor, or diethylselenide.

19. The method of claim 16 further comprising doping the material such that an acceptor concentration within the material layer is less than or equal to 1E18 cm⁻

3.

20. A solar cell, comprising:

a first metal layer disposed on a substrate;

a material layer formed above the first metal layer, wherein the material layer comprises at least one of MoSe₂, MoS₂, ZnSnO₃, MoO_x, ZnTe, Cu_xTe, MoTe, or Sb₂Te₃;

an absorber material layer formed above the material layer;

a buffer material layer formed above to the absorber material layer;

a transparent conductive oxide material layer formed above the buffer material layer; and

a second metal layer formed above the transparent conductive oxide material layer.