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VOLTAGE-CONTROLLED MAGNETIC MEMORY ELEMENT WITH CANTED MAGNETIZATION

  • US 20140169085A1
  • Filed: 12/09/2013
  • Published: 06/19/2014
  • Est. Priority Date: 12/07/2012
  • Status: Active Grant
First Claim
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1. A memory element, comprising:

  • a ferromagnetic free layer; and

    a ferromagnetic fixed layer separated from the free layer;

    wherein information is stored in a magnetization state of the free layer;

    wherein said magnetization state comprises two stable states that are canted to form an angle with respect to horizontal and vertical directions of the free layer; and

    wherein the free layer magnetization is switchable between the two canted states by the application of a voltage to modify the perpendicular magnetic anisotropy of the free layer.

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