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THIN FILM TRANSISTOR ARRAY PANEL AND METHOD OF MANUFACTURING THE SAME

  • US 20140175429A1
  • Filed: 11/04/2013
  • Published: 06/26/2014
  • Est. Priority Date: 12/21/2012
  • Status: Active Grant
First Claim
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1. A thin film transistor array panel, comprising:

  • a channel layer comprising an oxide semiconductor and formed in a semiconductor layer;

    a source electrode formed in the semiconductor layer and connected to the channel layer at a first side of the channel layer;

    a drain electrode formed in the semiconductor layer and connected to the channel layer at a second side of the channel layer, opposing the first side;

    a pixel electrode formed in the semiconductor layer in a same portion of the semiconductor layer as the drain electrode;

    an insulating layer disposed on the channel layer;

    a gate line comprising a gate electrode disposed on the insulating layer;

    a passivation layer disposed on the source electrode, the drain electrode, the pixel electrode, and the gate line; and

    a data line disposed on the passivation layer,wherein a width of the channel layer is substantially equal to a width of the pixel electrode in a direction parallel to the gate line.

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