SEMICONDUCTOR DEVICE

• US 20140175432A1
• Filed: 12/16/2013
• Published: 06/26/2014
• Est. Priority Date: 12/25/2012
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: YAMAZAKI, Shunpei, MIYAKE, Hiroyuki, SHISHIDO, Hideaki, KATAYAMA, Masahiro, OKAZAKI, Kenichi
• Granted Patent: US 9,911,755 B2
• Time in Patent Office: Days
• US Class Current: 257/43
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/1248 with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors

Abstract

A semiconductor device includes a transistor including an insulating film, an oxide semiconductor film, a gate electrode overlapping with the oxide semiconductor film, and a pair of electrodes in contact with the oxide semiconductor film; a capacitor including a first light-transmitting conductive film over the insulating film, a dielectric film over the first light-transmitting conductive film, and a second light-transmitting conductive film over the dielectric film; an oxide insulating film over the pair of electrodes of the transistor; and a nitride insulating film over the oxide insulating film. The dielectric film is the nitride insulating film, the oxide insulating film has a first opening over one of the pair of electrodes, the nitride insulating film has a second opening over the one of the pair of electrodes, and the second opening is on an inner side than the first opening.

Claims

1. A semiconductor device comprising:

a transistor, the transistor including;

a first insulating film;

an oxide semiconductor film over the first insulating film; and

a gate electrode adjacent to the oxide semiconductor film;

a capacitor, the capacitor including;

a first light-transmitting conductive film over the first insulating film;

a nitride insulating film over the first light-transmitting conductive film; and

a second light-transmitting conductive film over the nitride insulating film; and

an oxide insulating film over the oxide semiconductor film, the gate electrode, and the first light-transmitting conductive film,

wherein the second light-transmitting conductive film is electrically connected to the oxide semiconductor film, and

wherein the nitride insulating film is positioned over the oxide insulating film and is in contact with the first light-transmitting conductive film.

2. The semiconductor device according to claim 1, wherein the oxide semiconductor film comprises an In—

Ga—

Zn oxide.

3. The semiconductor device according to claim 1, wherein the first light-transmitting conductive film comprises an In—

Ga—

Zn oxide.

4. The semiconductor device according to claim 1, wherein each of the oxide semiconductor film and the first light-transmitting conductive film is in contact with a top surface of the first insulating film.

5. The semiconductor device according to claim 1,

wherein the second light-transmitting conductive film is electrically connected to the oxide semiconductor film through an opening of the oxide insulating film and an opening of the nitride insulating film, and

wherein a width of the opening of the oxide insulating film is larger than a width of the opening of the nitride insulating film.

6. A semiconductor device comprising:

a transistor, the transistor including;

a gate electrode;

an insulating film over the gate electrode;

an oxide semiconductor film over the insulating film; and

a pair of electrodes in contact with the oxide semiconductor film;

a capacitor, the capacitor including;

a first light-transmitting conductive film over the insulating film;

a dielectric film over the first light-transmitting conductive film; and

a second light-transmitting conductive film over the dielectric film;

an oxide insulating film over the pair of electrodes of the transistor; and

a nitride insulating film over the oxide insulating film,

wherein the dielectric film included in the capacitor is the nitride insulating film,

wherein the oxide insulating film has a first opening over each of one of the pair of electrodes and the first light-transmitting conductive film,

wherein the nitride insulating film has a second opening over the one of the pair of electrodes,

wherein the second opening is on an inner side than the first opening over the one of the pair of electrodes, and

wherein the second light-transmitting conductive film included in the capacitor is connected to the one of the pair of electrodes included in the transistor in the second opening over the one of the pair of electrodes.

7. The semiconductor device according to claim 6,

wherein the oxide semiconductor film and the first light-transmitting conductive film each include a microcrystalline region, and

wherein in the microcrystalline region, circumferentially arranged spots are observed in an electron diffraction pattern using electron diffraction with a measurement area less than or equal to 10 nmφ

and circumferentially arranged spots are not observed in an electron diffraction pattern using electron diffraction with a measurement area greater than or equal to 300 nmφ

.

8. The semiconductor device according to claim 6, wherein the oxide semiconductor film and the first light-transmitting conductive film each include indium or zinc.

9. The semiconductor device according to claim 6, further comprising:

a first conductive film over an insulating surface;

a second conductive film over the insulating film; and

a third light-transmitting conductive film connecting the first conductive film and the second conductive film, over the nitride insulating film,

wherein the gate electrode is provided over the insulating surface,

wherein the oxide insulating film includes a third opening over the first conductive film,

wherein the nitride insulating film includes a fourth opening over the first conductive film,

wherein the fourth opening is on an inner side than the third opening, and

wherein the first conductive film is connected to the third light-transmitting conductive film in the fourth opening.

10. The semiconductor device according to claim 9,

wherein the first conductive film is formed through the same process as that of the gate electrode,

wherein the second conductive film is formed through the same process as that of the pair of electrodes, and

wherein the third light-transmitting conductive film is formed through the same process as that of the second light-transmitting conductive film.

11. The semiconductor device according to claim 6, further comprising a capacitor line formed on the same surface where the gate electrode is formed,

wherein the first light-transmitting conductive film is in contact with the capacitor line.

12. The semiconductor device according to claim 6, further comprising a capacitor line formed on the same surface where the pair of electrodes is formed,

wherein the first light-transmitting conductive film is in contact with the capacitor line.

13. A semiconductor device comprising:

a transistor, the transistor including;

a gate electrode;

an insulating film over the gate electrode;

an oxide semiconductor film over the insulating film; and

a pair of electrodes in contact with the oxide semiconductor film;

a capacitor, the capacitor including;

a first light-transmitting conductive film over the insulating film;

a dielectric film over the first light-transmitting conductive film; and

a second light-transmitting conductive film over the dielectric film;

an oxide insulating film over the pair of electrodes of the transistor; and

a nitride insulating film over the oxide insulating film,

wherein the dielectric film included in the capacitor is the nitride insulating film,

wherein the second light-transmitting conductive film included in the capacitor is connected to one of the pair of electrodes included in the transistor, and

wherein a hydrogen concentration of the oxide semiconductor film is different from a hydrogen concentration of the first light-transmitting conductive film.

14. The semiconductor device according to claim 13, wherein the hydrogen concentration of the first light-transmitting conductive film is higher than the hydrogen concentration of the oxide semiconductor film.

15. The semiconductor device according to claim 13,

wherein the oxide semiconductor film and the first light-transmitting conductive film each include a microcrystalline region, and

wherein in the microcrystalline region, circumferentially arranged spots are observed in an electron diffraction pattern using electron diffraction with a measurement area less than or equal to 10 nmφ

and circumferentially arranged spots are not observed in an electron diffraction pattern using electron diffraction with a measurement area greater than or equal to 300 nmφ

.

16. The semiconductor device according to claim 13, wherein the oxide semiconductor film and the first light-transmitting conductive film each include indium or zinc.

17. The semiconductor device according to claim 13, further comprising:

a first conductive film over an insulating surface;

a second conductive film over the insulating film; and

a third light-transmitting conductive film connecting the first conductive film and the second conductive film, over the nitride insulating film,

wherein the gate electrode is provided over the insulating surface,

wherein the oxide insulating film includes a third opening over the first conductive film,

wherein the nitride insulating film includes a fourth opening over the first conductive film,

wherein the fourth opening is on an inner side than the third opening, and

wherein the first conductive film is connected to the third light-transmitting conductive film in the fourth opening.

18. The semiconductor device according to claim 17,

wherein the first conductive film is formed through the same process as that of the gate electrode,

wherein the second conductive film is formed through the same process as that of the pair of electrodes, and

wherein the third light-transmitting conductive film is formed through the same process as that of the second light-transmitting conductive film.

19. The semiconductor device according to claim 13, further comprising a capacitor line formed on the same surface where the gate electrode is formed,

wherein the first light-transmitting conductive film is in contact with the capacitor line.

20. The semiconductor device according to claim 13, further comprising a capacitor line formed on the same surface where the pair of electrodes is formed,

wherein the first light-transmitting conductive film is in contact with the capacitor line.