LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME

• US 20140175465A1
• Filed: 12/20/2013
• Published: 06/26/2014
• Est. Priority Date: 12/21/2012
• Status: Active Grant

• Current Assignee: Seoul Viosys Co., Ltd. (Seoul Semiconductor Co., Ltd.)
• Original Assignee: Seoul Viosys Co., Ltd. (Seoul Semiconductor Co., Ltd.)
• Inventors: KIM, Jong Kyu, YOON, Yeo Jin, KIM, Jae Kwon, LEE, Seom Geun, KIM, Mae Yi
• Granted Patent: US 9,093,627 B2
• Time in Patent Office: Days
• US Class Current: 257/88
• CPC Class Codes: H01L 27/15 including semiconductor components having potential barriers, specially adapted for light emission
• CPC Class Codes: H01L 27/156 two-dimensional arrays
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 2933/0066 relating to arrangements for conducting electric current to or from the semiconductor body
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/0075 comprising nitride compounds
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/08 with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body H01L27/15 takes precedence
• CPC Class Codes: H01L 33/10 with a light reflecting structure, e.g. semiconductor Bragg reflector
• CPC Class Codes: H01L 33/14 with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
• CPC Class Codes: H01L 33/145 with a current-blocking structure
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/42 Transparent materials
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

Exemplary embodiments of the present invention provide a light emitting diode including a first light emitting cell and a second light emitting cell disposed on a substrate and spaced apart from each other, a first transparent electrode layer disposed on the first light emitting cell and electrically connected to the first light emitting cell, a current blocking layer disposed between a portion of the first light emitting cell and the first transparent electrode layer, an interconnection electrically connecting the first light emitting cell and the second light emitting cell, and an insulation layer disposed between the interconnection and a side surface of the first light emitting cell. The current blocking layer and the insulation layer are connected to each other.

Claims

1. A light emitting diode, comprising:

a first light emitting cell and a second light emitting cell disposed on a substrate, the first light emitting cell and the second light emitting being spaced apart from each other;

a first transparent electrode layer disposed on the first light emitting cell, the first transparent electrode layer being electrically connected to the first light emitting cell;

a current blocking layer disposed between a portion of the first light emitting cell and the first transparent electrode layer;

an interconnection electrically connecting the first light emitting cell and the second light emitting cell; and

an insulation layer disposed between the interconnection and a side surface of the first light emitting cell,

wherein the current blocking layer and the insulation layer are connected to each other.

2. The light emitting diode of claim 1, wherein the current blocking layer and the insulation layer comprise distributed Bragg reflectors.

3. The light emitting diode of claim 2, wherein the current blocking layer and the insulation layer are disposed between the first light emitting cell and the interconnection in an entire overlapping area between the first light emitting cell and the interconnection.

4. The light emitting diode of claim 3, wherein the insulation layer is disposed between the interconnection and the side surface of the second light emitting cell.

5. The light emitting diode of claim 4, further comprising:

an insulation protective layer disposed on the first light emitting cell and the second light emitting cell, the insulation protective layer being disposed outside an area in which the interconnection is disposed.

6. The light emitting diode of claim 5, wherein a side surface of the insulation protective layer contacts a side surface of the interconnection on a coplanar surface.

7. The light emitting diode of claim 1, further comprising:

a first transparent conductive layer disposed between the insulation layer and the interconnection.

8. The light emitting diode of claim 7, wherein the first transparent conductive layer is connected to the first transparent electrode layer.

9. The light emitting diode of claim 1, wherein each of the first and second light emitting cells comprises a lower semiconductor layer, an upper semiconductor layer, and an active layer disposed between the lower semiconductor layer and the upper semiconductor layer,

wherein the first transparent electrode layer is electrically connected to the upper semiconductor layer, and

wherein the interconnection contacts the first transparent electrode layer at a first end thereof and the lower semiconductor layer of the second light emitting cell at a second end thereof.

10. The light emitting diode of claim 9, wherein the interconnection is directly connected to the first transparent electrode layer over an entire overlapping area therebetween.

11. The light emitting diode of claim 10, wherein the current blocking layer is disposed at least under the direct connection area between the first transparent electrode layer and the interconnection.

12. The light emitting diode of claim 9, wherein the first light emitting cell and the second light emitting cell comprise the same structure.

13. A light emitting diode, comprising:

a first light emitting cell and a second light emitting cell disposed on a substrate, the first light emitting cell and the second light emitting being spaced apart from each other;

a first transparent electrode layer disposed on the first light emitting cell, the first transparent electrode being electrically connected to the first light emitting cell;

a current blocking layer disposed between a portion of the first light emitting cell and the first transparent electrode layer;

an interconnection electrically connecting the first light emitting cell and the second light emitting cell; and

an insulation layer disposed between the interconnection and a side surface of the first light emitting cell,

wherein the current blocking layer and the insulation layer comprise distributed Bragg reflectors comprising the same structure, and comprise the same material.

14. The light emitting diode of claim 13, wherein the interconnection is directly connected to the first transparent electrode layer over an entire overlapping area therebetween.

15. The light emitting diode of claim 13, wherein the distributed Bragg reflectors are disposed under the interconnection over an entire area of the interconnection.

16. The light emitting diode of claim 13, further comprising:

a first transparent conductive layer disposed between the insulation layer and the interconnection.

17. The light emitting diode of claim 16, wherein the first transparent conductive layer is connected to the first transparent electrode layer.

18. The light emitting diode of claim 17, wherein the transparent conductive layer electrically connects the transparent electrode layer to the second light emitting cell.

19. The light emitting diode of claim 13, further comprising:

an insulation protective layer disposed outside an area in which the interconnection is disposed.

20. A light emitting diode, comprising:

a first light emitting cell and a second light emitting cell disposed on a substrate, the first light emitting cell and the second light emitting being spaced apart from each other;

a first transparent electrode layer disposed on the first light emitting cell, the first transparent electrode being electrically connected to the first light emitting cell;

a current blocking layer disposed between a portion of the first light emitting cell and the first transparent electrode layer;

an interconnection electrically connecting the first light emitting cell and the second light emitting cell; and

an insulation layer disposed between the interconnection from a side surface of the first light emitting cell,

wherein the second light emitting cell has an inclined side surface, and the interconnection comprises a first connection section connected to the first light emitting cell and a second connection section connected to the second light emitting cell, the first connection section contacting the first transparent electrode layer within an upper area of the current blocking layer, the second connection section contacting the inclined side surface of the second light emitting cell.