LED CHIP UNIT WITH CURRENT BAFFLE

• US 20140175498A1
• Filed: 07/08/2013
• Published: 06/26/2014
• Est. Priority Date: 12/21/2012
• Status: Abandoned Application

• Current Assignee: Hon Hai Precision Industry Co., Ltd.
• Original Assignee: Hon Hai Precision Industry Co., Ltd.
• Inventors: LAI, CHIH-CHEN
• Application Number:
  US13/936,359
• Publication Number:
  US 20140175498A1
• Time in Patent Office: Days
• US Class Current: 257/99
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

An LED chip unit includes a base and a chip mounted on the base. The chip includes a substrate, a first semiconductor layer, a light emitting layer, a second semiconductor layer and an electrode. The base forms multiple conductive posts and current baffles therein. Widths of the current baffles gradually decrease from a central portion of the chip towards two lateral portions of the chip.

Claims

1. Alight emitting diode (LED) chip unit comprising:

a chip comprising a substrate, a first semiconductor layer, a light emitting layer, a second semiconductor layer and an electrode;

a base supporting the chip; and

a plurality of current baffles formed at an interface of the chip and the base, wherein the interface comprises a first location corresponding to the electrode and a second location away from the first location, and sizes or densities, or both, of the current baffles decrease from the first location towards the second location.

2. The LED chip unit of claim 1, wherein the first location is a central portion of the chip, and the second location is a periphery portion of the chip.

3. The LED chip unit of claim 1, wherein the current baffles are more densely distributed at the first location than at the second location.

4. The LED chip unit of claim 1, wherein the current baffles are wider at the first location than at the second location.

5. The LED chip unit of claim 1, wherein the base comprises a first electrical pad formed on a top face thereof and a second electrical pad formed on a bottom face thereof.

6. The LED chip unit of claim 5, wherein the first electrical pad is located adjacent to the chip.

7. The LED chip unit of claim 5, wherein the electrode is electrically connected to the first electrical pad via a wire.

8. The LED chip unit of claim 5, wherein the current baffles are solid.

9. The LED chip unit of claim 8, wherein the current baffles are completely embedded within the base.

10. The LED chip unit of claim 8, wherein the base comprises a plurality of electrical-conductive posts embedded/surrounded by an electrical-insulative material, the plurality of electrical conductive posts extend from the top face to the bottom face.

11. The LED chip unit of claim 10, wherein the current baffles are located between the electrical-conductive posts.

12. The LED chip unit of claim 11, wherein the current baffles and the electrical-conductive posts are alternately placed.

13. The LED chip unit of claim 10, wherein the second electrical pad covers and directly connects to the electrical-conductive posts.

14. The LED chip unit of claim 5, wherein the current baffles are depressions.

15. The LED chip unit of claim 14, wherein the depressions are void with air contained therein.

16. The LED chip unit of claim 14, wherein the depressions are defined in a bottom face of the substrate.

17. The LED chip unit of claim 14, wherein the base is made of electrical-conductive material.

18. The LED chip unit of claim 17, wherein the first electrical pad is insulated from the base by an insulative layer formed therebetween.