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NONPLANAR III-N TRANSISTORS WITH COMPOSITIONALLY GRADED SEMICONDUCTOR CHANNELS

  • US 20140175515A1
  • Filed: 12/21/2012
  • Published: 06/26/2014
  • Est. Priority Date: 12/21/2012
  • Status: Active Grant
First Claim
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1. A non-planar III-N transistor disposed on a substrate, the transistor comprising:

  • two wide band gap material layers on opposite {0001} surfaces of a III-N semiconductor channel that has a compositional grading along the c-axis between the two wide band gap III-N layers;

    a gate stack comprising a gate dielectric and gate electrode, the gate stack disposed over opposing surfaces of the semiconductor channel that span a distance between the two wide band gap material layers; and

    a pair of source/drain regions embedded in or coupled to the non-planar III-N semiconductor body at opposite sides of the gate stack.

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