×

SEMICONDUCTOR SUBSTRATE FOR PHOTONIC AND ELECTRONIC STRUCTURES AND METHOD OF MANUFACTURE

  • US 20140175596A1
  • Filed: 01/09/2014
  • Published: 06/26/2014
  • Est. Priority Date: 12/26/2012
  • Status: Active Grant
First Claim
Patent Images

1. A method of forming an integrated structure, the method comprising:

  • forming an etch mask material over a semiconductor substrate;

    using a single reticle in a photolithographic process to pattern the etch mask material to define a first and a second opening for forming a first and a second trench isolation area, the second opening being wider than the first opening;

    etching first and second trench isolation areas in the semiconductor substrate using the patterned etch mask material;

    processing the etched first and second trench isolation areas to produce first and second trench isolation areas, filled with a dielectric material, the second dielectric filled trench isolation area being deeper than the dielectric filled first trench isolation area;

    forming a photonic device over the dielectric filled second trench isolation area such that the photonic device is optically isolated from the substrate.

View all claims
  • 7 Assignments
Timeline View
Assignment View
    ×
    ×