SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
First Claim
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1. A semiconductor device comprising:
- a semiconductor substrate including a peripheral region;
an active region, a first device isolation region, and a second device isolation region formed in the semiconductor substrate of the peripheral region, the active region comprising a fin-type active region that corresponds to top and sidewall surfaces of the active region;
an insulation film formed in the first and second device isolation regions; and
a gate formed over the fin-type active region.
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Abstract
In order to fabricate a semiconductor device, a semiconductor substrate in a peripheral region is etched to form a plurality of holes. A gap-filling material is buried in the holes of the semiconductor substrate in the peripheral region, and first and second device isolation films are formed in the semiconductor device. A fin structure is formed by recessing the gap-filling material, and a gate is formed over a surface including the fin structure. As a result, operation characteristics of transistors formed in the peripheral region are improved and the short channel effects are also reduced.
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Citations
18 Claims
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1. A semiconductor device comprising:
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a semiconductor substrate including a peripheral region; an active region, a first device isolation region, and a second device isolation region formed in the semiconductor substrate of the peripheral region, the active region comprising a fin-type active region that corresponds to top and sidewall surfaces of the active region; an insulation film formed in the first and second device isolation regions; and a gate formed over the fin-type active region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. An electronic device comprising:
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a memory device configured to store data and read the stored data in response to a data input/output (I/O) control signal; and a memory controller configured to generate the data I/O control signal, and control data I/O operations of the memory device, wherein the memory device includes; a semiconductor substrate including a peripheral region; an active region, a first device isolation region, and a second device isolation region formed in the semiconductor substrate of the peripheral region, the active region comprising a fin-type active region that corresponds to top and sidewall surfaces of the active region; an insulation film formed in the first and second device isolation regions; and a gate formed over the fin-type active region. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16, 17, 18)
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Specification