IMAGE SENSOR FOR LIGHT FIELD DEVICE AND MANUFACTURING METHOD THEREOF

• US 20140183334A1
• Filed: 01/03/2013
• Published: 07/03/2014
• Est. Priority Date: 01/03/2013
• Status: Abandoned Application

• Current Assignee: Visera Technologies Company Limited (Taiwan Semiconductor Manufacturing Company Limited)
• Original Assignee: Visera Technologies Company Limited (Taiwan Semiconductor Manufacturing Company Limited)
• Inventors: WANG, Wei-Ko, CHANG, Chin-Ching, WU, Chia-Hui, HUANG, Chien-Hsiung, LIN, Cheng-Xuan, CHENG, Chieh-Yuan, CHEN, Chang Wei
• Application Number:
  US13/733,691
• Publication Number:
  US 20140183334A1
• Time in Patent Office: Days
• US Class Current: 250/208.1
• CPC Class Codes: H01L 27/14605 Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery
• CPC Class Codes: H01L 27/14627 Microlenses
• CPC Class Codes: H01L 27/14685 Process for coatings or optical elements

Abstract

An image sensor for light field devices includes a plurality of sub-microlenses, a space layer, and a plurality of main microlenses. The space layer is disposed on the sub-microlenses, and the main microlenses are disposed on the space layer. The diameter of each of the main microlenses exceeds that of each of the sub-microlenses.

Claims

1. An image sensor for light field devices, comprising:

a plurality of sub-microlenses;

a space layer disposed on the sub-microlenses; and

a plurality of main microlenses disposed on the space layer,

wherein a diameter of each of the main microlenses exceeds that of each of the sub-microlenses.

2. The image sensor as claimed in claim 1, further comprising a plurality of filter units, wherein each of the sub-microlenses is disposed on one of the filter units.

3. The image sensor as claimed in claim 2, further comprising a sensing layer comprises a plurality of sensing units, wherein each of the filter units is disposed on one of the sensing units.

4. The image sensor as claimed in claim 1, wherein the diameter of each of the main microlenses is 2 times to 20 times that of the diameter of each of the sub-microlenses.

5. The image sensor as claimed in claim 1, wherein a refractive index of the space layer is lower than 1.6.

6. The image sensor as claimed in claim 5, wherein a refractive index of each of the main microlenses is the same as the space layer.

7. The image sensor as claimed in claim 1, wherein a refractive index of each of the main microlenses is lower than 1.7.

8. The image sensor as claimed in claim 1, wherein a refractive index of each of the sub-microlenses is greater than 1.7.

9. The image sensor as claimed in claim 1, wherein the space layer includes SiO₂, and is transparent.

10. The image sensor as claimed in claim 1, wherein the main microlenses include SiO₂, MgF₂, or SiON, and the sub-microlenses include SiN, TiO₂, Ta₂O₅, or HfO₂.

11. The image sensor as claimed in claim 1, wherein a focus of each of the main microlenses is located at one of the sub-microlenses.

12. The image sensor as claimed in claim 1, wherein the main microlenses include a plurality of first microlenses and a plurality of the second microlenses, and a focal length of each of the first microlenses exceeds that of each of the second microlenses, and the first microlenses and the second microlenses are arranged alternately.

13. The image sensor as claimed in claim 1, wherein the main microlenses include a plurality of first microlenses, a plurality of second microlenses and a plurality of third microlenses, and a focal length of each of the first microlenses exceeds that of each of the second microlenses, and a focal length of each of the second microlenses exceeds that of each of the third microlenses, and the first microlenses, the second microlenses, and the third microlenses are arranged alternately.

14. The image sensor as claimed in claim 1, comprising an anti-reflective coating layer disposed on the main microlenses.

15. A manufacturing method of an image sensor, comprising:

providing a sensing layer;

forming a plurality of sub-microlenses on the sensing layer;

forming a space layer on the sub-microlenses by a semiconductor process; and

forming a plurality of main microlenses on the space layer, wherein a diameter of each of the main microlenses exceeds that of each of the sub-microlenses.

16. The manufacturing method as claimed in claim 15, further comprising forming a plurality of filter units on the sensing layer, wherein each of the sub-microlenses is disposed on one of the filter units.

17. The manufacturing method as claimed in claim 16, wherein the sensing layer comprises a plurality of sensing units, and each of the filter units is disposed on one of the sensing units.

18. The manufacturing method as claimed in claim 15, wherein the space layer includes SiO₂, and is transparent.

19. The manufacturing method as claimed in claim 15, wherein the main microlenses include SiO₂, MgF₂, or SiON, and the sub-microlenses include SiN, TiO₂, Ta₂O₅, or HfO₂.

20. The manufacturing method as claimed in claim 15, comprising forming an anti-reflective coating layer on the main microlenses.