THIN FILM TRANSISTOR STRUCTURE
First Claim
1. A thin film transistor structure, comprising:
- a substrate;
a gate disposed on the substrate;
an oxide semiconductor layer disposed on the substrate, wherein the oxide semiconductor and the gate being stacked in a thickness direction;
a gate insulation layer disposed between the oxide semiconductor layer and the gate;
a source disposed on the substrate and in contact with the oxide semiconductor layer;
a drain disposed on the substrate and in contact with the oxide semiconductor layer, wherein a portion of the oxide semiconductor layer without in contact with the source and the drain defines a channel region and the channel region is located between the source and the drain;
a silicon-containing light absorption layer stacked in the thickness direction with the oxide semiconductor layer and the oxide semiconductor layer being located between the substrate and the silicon-containing light absorption layer, wherein the silicon-containing light absorption layer has a band gap smaller than 2.5 eV; and
an insulation layer disposed between the oxide semiconductor layer and the silicon-containing light absorption layer, and the insulation layer being in contact with the silicon-containing light absorption layer.
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Accused Products
Abstract
A thin film transistor structure including a substrate, a gate, an oxide semiconductor layer, a gate insulation layer, a source, a drain, a silicon-containing light absorption layer and an insulation layer is provided. The gate insulation layer is disposed between the oxide semiconductor layer and the gate. The oxide semiconductor layer and the gate are stacked in a thickness direction. The source and the drain contact the oxide semiconductor layer. A portion of the oxide semiconductor layer without contacting the source and the drain defines a channel region located between the source and the drain. The oxide semiconductor layer is located between the substrate and the silicon-containing light absorption layer. The silicon-containing light absorption layer has a band gap smaller than 2.5 eV. The insulation layer is disposed between the oxide semiconductor layer and the silicon-containing light absorption layer, and in contact with the silicon-containing light absorption layer.
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Citations
13 Claims
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1. A thin film transistor structure, comprising:
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a substrate; a gate disposed on the substrate; an oxide semiconductor layer disposed on the substrate, wherein the oxide semiconductor and the gate being stacked in a thickness direction; a gate insulation layer disposed between the oxide semiconductor layer and the gate; a source disposed on the substrate and in contact with the oxide semiconductor layer; a drain disposed on the substrate and in contact with the oxide semiconductor layer, wherein a portion of the oxide semiconductor layer without in contact with the source and the drain defines a channel region and the channel region is located between the source and the drain; a silicon-containing light absorption layer stacked in the thickness direction with the oxide semiconductor layer and the oxide semiconductor layer being located between the substrate and the silicon-containing light absorption layer, wherein the silicon-containing light absorption layer has a band gap smaller than 2.5 eV; and an insulation layer disposed between the oxide semiconductor layer and the silicon-containing light absorption layer, and the insulation layer being in contact with the silicon-containing light absorption layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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Specification