SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
First Claim
1. A semiconductor device comprising a capacitor element, comprising:
- a first insulating layer including nitrogen;
a gate electrode layer over the first insulating layer;
a second insulating layer over the gate electrode layer;
a first oxide semiconductor layer over the second insulating layer, the first oxide semiconductor layer overlapping with the gate electrode layer;
a second oxide semiconductor layer over and in contact with the first insulating layer;
a source electrode layer and a drain electrode layer electrically connected to the first oxide semiconductor layer;
a third insulating layer over and in contact with the first oxide semiconductor layer and the second oxide semiconductor layer; and
a transparent conductive layer over the third insulating layer, the transparent conductive layer overlapping with the second oxide semiconductor layer,wherein one of electrodes of the capacitor element is the second oxide semiconductor layer.
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Accused Products
Abstract
A semiconductor device with high aperture ratio is provided. The semiconductor device includes a nitride insulating film, a transistor over the nitride insulating film, and a capacitor including a pair of electrodes over the nitride insulating film. An oxide semiconductor layer is used for a channel formation region of the transistor and one of the electrodes of the capacitor. A transparent conductive film is used for the other electrode of the capacitor. One electrode of the capacitor is in contact with the nitride insulating film, and the other electrode of the capacitor is electrically connected to one of a source electrode and a drain electrode of the transistor.
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Citations
20 Claims
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1. A semiconductor device comprising a capacitor element, comprising:
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a first insulating layer including nitrogen; a gate electrode layer over the first insulating layer; a second insulating layer over the gate electrode layer; a first oxide semiconductor layer over the second insulating layer, the first oxide semiconductor layer overlapping with the gate electrode layer; a second oxide semiconductor layer over and in contact with the first insulating layer; a source electrode layer and a drain electrode layer electrically connected to the first oxide semiconductor layer; a third insulating layer over and in contact with the first oxide semiconductor layer and the second oxide semiconductor layer; and a transparent conductive layer over the third insulating layer, the transparent conductive layer overlapping with the second oxide semiconductor layer, wherein one of electrodes of the capacitor element is the second oxide semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method for manufacturing a semiconductor device comprising a capacitor element, comprising the steps of:
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forming a first insulating layer including nitrogen; forming a gate electrode layer over the first insulating layer; forming a second insulating layer over the gate electrode layer; forming a first oxide semiconductor layer over the second insulating layer so as to overlap with the gate electrode layer; forming a second oxide semiconductor layer over and in contact with the first insulating layer; forming a source electrode layer and a drain electrode layer so as to be electrically connected to the first oxide semiconductor layer; forming a third insulating layer over and in contact with the first oxide semiconductor layer and the second oxide semiconductor layer; and forming a transparent conductive layer over the third insulating layer so as to overlap with the second oxide semiconductor layer, wherein one of electrodes of the capacitor element is the second oxide semiconductor layer. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification