MISCUT SEMIPOLAR OPTOELECTRONIC DEVICE

• US 20140183579A1
• Filed: 01/02/2013
• Published: 07/03/2014
• Est. Priority Date: 01/02/2013
• Status: Abandoned Application

• Current Assignee: Japan Science And Technology Agency, Regents of the University of California (University of California)
• Original Assignee: Japan Science And Technology Agency, Regents of the University of California (University of California)
• Inventors: Kaeding, John F., Lee, Dong-Seon, Iza, Michael, Baker, Troy J., Sato, Hitoshi, Haskell, Benjamin A., Speck, James S., DenBaars, Steven P., Nakamura, Shuji
• Application Number:
  US13/732,532
• Publication Number:
  US 20140183579A1
• Time in Patent Office: Days
• US Class Current: 257/94
• CPC Class Codes: H01L 33/0075 comprising nitride compounds
• CPC Class Codes: H01L 33/16 with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous

Abstract

A method for improved growth of a semipolar (Al,In,Ga,B)N semiconductor thin film using an intentionally miscut substrate. Specifically, the method comprises intentionally miscutting a substrate, loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an In_xGa_1-xN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the In_xGa_1-xN nucleation layer, and cooling the substrate under a nitrogen overpressure.

Claims

1. A device, comprising a semi-polar III-nitride film having a crystalline quality characterized by a rocking curve having a full width at half maximum (FWHM) of less than 0.55 degrees as measured by X-ray Diffraction.

2. The device of claim 1, wherein the FWHM is less than 900 arcseconds.

3. The device of claim 1, wherein a top surface of the semi-polar III-nitride film is planar and has a surface area at least 10 micrometers wide.

4. The device of claim 1, wherein the semi-polar III-nitride film comprises a semi-polar III-nitride light emitting diode structure that emits light with an output power of more than 220 microwatts.

5. The device of claim 1, wherein the semi-polar III-nitride film contains a single crystallographic domain.

6. The device of claim 1, wherein the semi-polar III-nitride film is on a miscut surface of a substrate.

7. The device of claim 1, wherein the semi-polar III-nitride film is on or above a Gallium Nitride (GaN) substrate.

8. The device of claim 1, wherein the semi-polar III-nitride film is on or above an aluminum nitride substrate.

9. The device of claim 1, wherein the semi-polar III-nitride film is part of a light emitting device comprising InN, AlGaN, InGaN, or AlInN.

10. The device of claim 1, wherein the semi-polar III-nitride film is a {11-22} film.

11. The device of claim 1, wherein the semi-polar III-nitride film is a {10-11} film.

12. The device of claim 1, wherein the semi-polar III-nitride film is a {10-12} film.

13. The device of claim 1, wherein the semi-polar III-nitride film is a {10-13} film.

14. The device of claim 1, wherein the semi-polar III-nitride film is Gallium Nitride (GaN).

15. The device of claim 1, wherein the semi-polar III-nitride film is Aluminum Nitride.

16. The device of claim 1, wherein the semi-polar III-nitride film has a top surface with an area of more than 4 millimeters by 10 millimeters.

17. The device of claim 1, further comprising the semi-polar III-nitride film on or above a miscut surface of a substrate, wherein the semi-polar III-nitride film has a top surface that is smoother as compared to a semi-polar III-nitride film deposited on a surface of the substrate that is different from the miscut surface.

18. The device of claim 17, wherein the semi-polar III-nitride film is part of a III-nitride light emitting device having a brighter emission than a similar device fabricated on a surface of the substrate that is different from the miscut surface.

19. A method of fabricating a device, comprising growing a semi-polar III-nitride film having a crystalline quality characterized by a rocking curve having a full width at half maximum (FWHM) of less than 0.55 degrees as measured by X-ray Diffraction.

20. The method of claim 19, further comprising:

polishing, cutting, or polishing and cutting a surface of a substrate to form a miscut surface, and growing the semi-polar III-nitride film on the miscut surface, wherein;

the growing is by Metal Organic Chemical Vapor Deposition or Hydride Vapor Phase Epitaxy,

a growing pressure is between 10 torr and 1000 torr,

a growing temperature is between 400°

C. and 1400°

C., and

the growing uses a flow comprising at least one of nitrogen, hydrogen or ammonia.