MISCUT SEMIPOLAR OPTOELECTRONIC DEVICE
First Claim
1. A device, comprising a semi-polar III-nitride film having a crystalline quality characterized by a rocking curve having a full width at half maximum (FWHM) of less than 0.55 degrees as measured by X-ray Diffraction.
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Abstract
A method for improved growth of a semipolar (Al,In,Ga,B)N semiconductor thin film using an intentionally miscut substrate. Specifically, the method comprises intentionally miscutting a substrate, loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an InxGa1-xN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the InxGa1-xN nucleation layer, and cooling the substrate under a nitrogen overpressure.
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Citations
20 Claims
- 1. A device, comprising a semi-polar III-nitride film having a crystalline quality characterized by a rocking curve having a full width at half maximum (FWHM) of less than 0.55 degrees as measured by X-ray Diffraction.
- 19. A method of fabricating a device, comprising growing a semi-polar III-nitride film having a crystalline quality characterized by a rocking curve having a full width at half maximum (FWHM) of less than 0.55 degrees as measured by X-ray Diffraction.
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