Semiconductor Devices and Methods of Manufacture Thereof

• US 20140183633A1
• Filed: 12/28/2012
• Published: 07/03/2014
• Est. Priority Date: 12/28/2012
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Tsai, Teng-Chun, Lin, Kuo-Yin, Chang, Hsiang-Pi, Ju, Shi Ning, Chen, Yen-Yu, Luan, Hongfa, Ching, Kuo-Cheng, Chen, Chi-Yuan, Pan, Wan-Chun
• Granted Patent: US 8,889,497 B2
• Time in Patent Office: Days
• US Class Current: 257/347
• CPC Class Codes: H01L 29/16 including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
• CPC Class Codes: H01L 29/20 including, apart from doping materials or other impurities, only AIIIBV compounds
• CPC Class Codes: H01L 29/24 including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22 including organic materials H10K99/00
• CPC Class Codes: H01L 29/42356 Disposition, e.g. buried gate electrode H01L29/42324 and H01L29/4234 take precedence
• CPC Class Codes: H01L 29/42392 fully surrounding the channel, e.g. gate-all-around
• CPC Class Codes: H01L 29/4966 the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2 H01L29/4908, H01L29/4983 take precedence
• CPC Class Codes: H01L 29/66795 with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
• CPC Class Codes: H01L 29/785 having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
• CPC Class Codes: H01L 29/7855 with at least two independent gates

Abstract

Semiconductor devices and methods of manufacture thereof are disclosed. In some embodiments, a method of manufacturing a semiconductor device includes partially manufacturing a fin field effect transistor (FinFET) including a semiconductor fin comprising a first semiconductive material and a second semiconductive material disposed over the first semiconductive material. A top portion of the second semiconductive material of the semiconductor fin is removed, and a top portion of the first semiconductive material is exposed. A top portion first semiconductive material is removed from beneath the second semiconductive material. The first semiconductive material and the second semiconductive material are oxidized, forming a first oxide comprising a first thickness on the first semiconductive material and a second oxide comprising a second thickness on the second semiconductive material, the first thickness being greater than the second thickness. The second oxide is removed from the second semiconductive material, and manufacturing of the FinFET is completed.

Claims

1. A method of manufacturing a semiconductor device, the method comprising:

partially manufacturing a fin field effect transistor (FinFET) including a semiconductor fin comprising a first semiconductive material and a second semiconductive material disposed over the first semiconductive material;

removing a top portion of the second semiconductive material of the semiconductor fin;

exposing a top portion of the first semiconductive material;

removing the top portion of the first semiconductive material from beneath the second semiconductive material;

oxidizing the first semiconductive material and the second semiconductive material, wherein oxidizing the first semiconductive material and the second semiconductive material comprises forming a first oxide comprising a first thickness on the first semiconductive material and forming a second oxide comprising a second thickness on the second semiconductive material, the first thickness being greater than the second thickness;

removing the second oxide from the second semiconductive material; and

completing manufacturing of the FinFET.

2. The method according to claim 1, wherein removing the second oxide also removes a first portion of the first oxide from the first semiconductive material yet leaves a second portion of the first oxide remaining on the first semiconductive material.

3. The method according to claim 1, wherein oxidizing the first semiconductive material and the second semiconductive material comprises an in-situ steam generation (ISSG) process.

4. The method according to claim 3, wherein the ISSG process comprises introducing oxygen at a temperature of about 300 degrees C. to 800 degrees C., a pressure of about 5 Torr to 40 Torr, a total gas flow of about 5 standard liters per minute (s.l.m.) to 50 s.l.m., a H₂% of about 2 to 33%, and a process time of about 30 seconds to 10 minutes.

5. The method according to claim 1, wherein oxidizing the first semiconductive material and the second semiconductive material comprises a wet furnace process.

6. The method according to claim 5, wherein the wet furnace process comprises a temperature of about 300 degrees C. to 800 degrees C., a pressure of about 200 Torr to 760 Torr, a total H₂O flow of about 5 liters (L) to 20 L, and a process time of about 10 minutes to 200 minutes.

7. The method according to claim 1, wherein oxidizing the first semiconductive material and the second semiconductive material comprises a H₂/O₂ plasma process.

8. The method according to claim 7, wherein the H₂/O₂ plasma process comprises a high temperature process at a temperature of about 300 degrees C. to 800 degrees C., a pressure of about 0.1 Torr to 20 Torr, a radio frequency (RF) power of about 10 Watts (W) to 4,000 W, a total gas flow (H₂+O₂) of about 100 standard cubic centimeters per minute (s.c.c.m.) to 4,000 s.c.c.m., and a process time of about 20 seconds to 20 minutes.

9. A method of manufacturing a semiconductor device, the method comprising:

partially manufacturing a fin field effect transistor (FinFET) including a semiconductor fin comprising a first semiconductive material disposed over a workpiece, the first semiconductive material being adjacent an isolation region, the semiconductor fin further comprising a second semiconductive material disposed over the first semiconductive material;

removing a top portion of the second semiconductive material of the semiconductor fin;

recessing the isolation region to expose sidewalls of a top portion of the first semiconductive material;

removing the top portion of the first semiconductive material from beneath the second semiconductive material;

oxidizing the first semiconductive material and the second semiconductive material, wherein oxidizing the first semiconductive material and the second semiconductive material forms a first oxide comprising a first thickness on the first semiconductive material and forms a second a second oxide comprising a second thickness on the second semiconductive material, the first thickness being greater than the second thickness;

removing the second oxide from the second semiconductive material and removing a portion of the first oxide from the first semiconductive material;

forming a gate dielectric over and around the second semiconductive material; and

forming a gate over and around the gate dielectric.

10. The method according to claim 9, wherein the first semiconductive material oxidizes at a first oxidation rate, wherein the second semiconductive material oxidizes at a second oxidation rate, and wherein the first oxidation rate is more than about 5 times greater than the second oxidation rate.

11. The method according to claim 9, wherein oxidizing the first semiconductive material and the second semiconductive material comprises simultaneously oxidizing the first semiconductive material and the second semiconductive material using an oxidation process.

12. The method according to claim 9, wherein removing the second oxide from the second semiconductive material and removing the portion of the first oxide from the first semiconductive material comprise simultaneously removing the second oxide from the second semiconductive material and removing the portion of the first oxide from the first semiconductive material using an etch process.

13-20. -20. (canceled)

21. A method of manufacturing a semiconductor device, the method comprising:

providing a semiconductor fin, wherein the semiconductor fin comprises;

a first semiconductive material; and

a second semiconductive material over the first semiconductive material, wherein

the second semiconductive material comprises a first portion on an opposite side of the first semiconductive material;

removing the first portion of the second semiconductive material;

recessing the first semiconductive material;

forming a first oxide with a first thickness on the first semiconductive material;

forming a second oxide with a second thickness around the second semiconductive material, the first thickness being greater than the second thickness;

removing the second oxide from the second semiconductive material; and

forming a gate dielectric around the second semiconductive material.

22. The method according to claim 21, wherein the forming the first oxide and the forming the second oxide comprise simultaneously oxidizing the first semiconductive material and the second semiconductive material.

23. The method according to claim 21, wherein the first semiconductive material oxidizes at a first oxidation rate, wherein the second semiconductive material oxidizes at a second oxidation rate, and wherein the first oxidation rate is more than about 5 times greater than the second oxidation rate.

24. The method according to claim 21, wherein at least one of the forming the first oxide and the forming the second oxide comprises an in-situ steam generation (ISSG) process.

25. The method according to claim 24, wherein the ISSG process comprises introducing oxygen at a temperature of about 300 degrees C. to 800 degrees C., a pressure of about 5 Torr to 40 Torr, a total gas flow of about 5 standard liters per minute (s.l.m.) to 50 s.l.m., a H₂% of about 2 to 33%, and a process time of about 30 seconds to 10 minutes.

26. The method according to claim 21, wherein at least one of the forming the first oxide and the forming the second oxide comprises a wet furnace process.

27. The method according to claim 26, wherein the wet furnace process comprises a temperature of about 300 degrees C. to 800 degrees C., a pressure of about 200 Torr to 760 Torr, a total H₂O flow of about 5 liters (L) to 20 L, and a process time of about 10 minutes to 200 minutes.

28. The method according to claim 21, wherein at least one of the forming the first oxide and the forming the second oxide comprises a H₂/O₂ plasma process.