WRITE METHOD FOR WRITING TO VARIABLE RESISTANCE NONVOLATILE MEMORY ELEMENT AND VARIABLE RESISTANCE NONVOLATILE MEMORY DEVICE

• US 20140185360A1
• Filed: 03/13/2013
• Published: 07/03/2014
• Est. Priority Date: 03/23/2012
• Status: Active Grant

• Current Assignee: Panasonic Semiconductor Solutions Co., Ltd. (Winbond Electronics Corporation)
• Original Assignee: Panasonic Corporation (Panasonic Holdings Corporation)
• Inventors: Kawai, Ken, Shimakawa, Kazuhiko, Katoh, Yoshikazu
• Granted Patent: US 9,202,565 B2
• Time in Patent Office: Days
• US Class Current: 365/148
• CPC Class Codes: G11C 13/0007 comprising metal oxide memory material, e.g. perovskites
• CPC Class Codes: G11C 13/0011 comprising conductive bridging RAM [CBRAM] or programming metallization cells [PMCs]
• CPC Class Codes: G11C 13/0033 Disturbance prevention or evaluation; Refreshing of disturbed memory data
• CPC Class Codes: G11C 13/0069 Writing or programming circuits or methods
• CPC Class Codes: G11C 13/0097 Erasing, e.g. resetting, circuits or methods
• CPC Class Codes: G11C 2013/0092 Write characterized by the shape, e.g. form, length, amplitude of the write pulse
• CPC Class Codes: G11C 2213/55 Structure including two electrodes, a memory active layer and at least two other layers which can be a passive or source or reservoir layer or a less doped memory active layer

Abstract

A write method for writing to a variable resistance nonvolatile memory element, comprising applying a set of strong recovery-voltage pulses at least once to the variable resistance nonvolatile memory element when it is determined that the resistance state of the variable resistance nonvolatile memory element fails to change to a second resistance state, remaining in a first resistance state, the set of strong recovery-voltage pulses including pulses: (1) a first strong recovery-voltage pulse which has a greater amplitude than a normal second voltage for changing the resistance state to the first resistance state, and has the same polarity as the second voltage; and (2) a second strong recovery-voltage pulse which follows the first strong recovery-voltage pulse and has a longer pulse width than the pulse width of the normal first voltage for changing the resistance state to the second resistance state, and has the same polarity as the first voltage.

Claims

1. A write method for writing to a variable resistance nonvolatile memory element for reversibly changing a resistance state of the variable resistance nonvolatile memory element by applying a voltage pulse to the variable resistance nonvolatile memory element,

the variable resistance nonvolatile memory element including a first electrode, a second electrode, and a variable resistance layer between the first electrode and the second electrode,

the variable resistance layer including a first transition metal oxide layer in contact with the first electrode, and a second transition metal oxide layer in contact with the second electrode, the second transition metal oxide layer having a smaller oxygen deficiency than the first transition metal oxide layer,

the variable resistance nonvolatile memory element having characteristics of changing the resistance state from a first resistance state for use in recording first information to a second resistance state for use in recording second information when a pulse of a first voltage is applied to the variable resistance nonvolatile memory element, and changing the resistance state from the second resistance state to the first resistance state when a pulse of a second voltage that has a polarity different from the first voltage is applied to the variable resistance nonvolatile memory element,

the write method comprising:

(a) determining whether the resistance state of the variable resistance nonvolatile memory element fails to change to the second resistance state, remaining in the first resistance state when the pulse of the first voltage is applied to the variable resistance nonvolatile memory element; and

(b) applying a set of strong recovery-voltage pulses at least once to the variable resistance nonvolatile memory element when it is determined in step (a) that the resistance state of the variable resistance nonvolatile memory element fails to change to the second resistance state, remaining in the first resistance state, the set of strong recovery-voltage pulses including two pulses which are;

a first strong recovery-voltage pulse having a greater amplitude than the second voltage and a same polarity as the second voltage; and

a second strong recovery-voltage pulse which follows the first strong recovery-voltage pulse and has a longer pulse width than a pulse width of the first voltage and a same polarity as the first voltage.

2. The write method for writing to the variable resistance nonvolatile memory element according to claim 1, further comprising

(c) applying, prior to step (b), a set of preliminary recovery voltage pulses at least once to the variable resistance nonvolatile memory element when it is determined in step (a) that the resistance state of the variable resistance nonvolatile memory element fails to change to the second resistance state, remaining in the first resistance state, the set of preliminary recovery voltage pulses including two pulses which are:

a first preliminary recovery-voltage pulse having a greater amplitude than the second voltage and a same polarity as the second voltage; and

a second preliminary recovery-voltage pulse which follows the first preliminary recovery-voltage pulse and has a same polarity as the first voltage,

wherein the set of strong recovery-voltage pulses is applied at least once to the variable resistance nonvolatile memory element in step (b) when the resistance state of the variable resistance nonvolatile memory element fails to change to the second resistance state after step (c).

3. The write method for writing to the variable resistance nonvolatile memory element according to claim 2,

wherein the first preliminary recovery-voltage pulse and the first strong recovery-voltage pulse are equal in amplitude.

4. The write method for writing to the variable resistance nonvolatile memory element according to claim 1, further comprising

(d) determining whether the resistance state of the variable resistance nonvolatile memory element has changed to the second resistance state by the application of the second strong recovery-voltage pulse,

wherein step (b) and step (d) are repeated until the resistance state of the variable resistance nonvolatile memory element reaches the second resistance state.

5. The write method for writing to the variable resistance nonvolatile memory element according to claim 4,

wherein when the resistance state of the variable resistance nonvolatile memory element does not change to the second resistance state after step (b) and step (d) are repeated a predetermined number of times, the second strong recovery-voltage pulse is changed to a new second strong recovery-voltage pulse that has a longer pulse width than the second strong recovery-voltage pulse, and step (b) and step (d) are repeated a predetermined number of times.

6. The write method for writing to the variable resistance nonvolatile memory element according to claim 1,

wherein the first transition metal oxide layer comprises a composition represented by TaO_x, and

the second transition metal oxide layer comprises a composition represented by TaO_y where x<

y.

7. The write method for writing to the variable resistance nonvolatile memory element according to claim 1,

wherein the variable resistance nonvolatile memory element is an element, a resistance state of which reversibly changes between a high resistance state and a low resistance state, the high resistance state being the first resistance state, the low resistance state being the second resistance state.

8. A variable resistance nonvolatile memory device comprising:

a memory cell in which a variable resistance nonvolatile memory element and a switching element are connected in series; and

a drive circuit for driving the memory cell,

the variable resistance nonvolatile memory element including a first electrode, a second electrode, and a variable resistance layer between the first electrode and the second electrode,

the variable resistance layer including a first transition metal oxide layer in contact with the first electrode, and a second transition metal oxide layer in contact with the second electrode, the second transition metal oxide layer having a smaller oxygen deficiency than the first transition metal oxide layer,

the variable resistance nonvolatile memory element having characteristics of changing a resistance state from a first resistance state for use in recording first information to a second resistance state for use in recording second information when a pulse of a first voltage is applied to the variable resistance nonvolatile memory element, and changing the resistance state from the second resistance state to the first resistance state when a pulse of a second voltage having a polarity different from the first voltage is applied to the variable resistance nonvolatile memory element,

the drive circuit including;

a write circuit for writing to the memory cell;

a sense amplifier for reading from the memory cell; and

a control circuit for executing, using the sense amplifier, (a) determining whether the resistance state of the variable resistance nonvolatile memory element fails to change to the second resistance state, remaining in the first resistance state when the write circuit applies the pulse of the first voltage to the variable resistance nonvolatile memory element,

wherein when it is determined in step (a) that the resistance state of the variable resistance nonvolatile memory element fails to change to the second resistance state, remaining in the first resistance state, the control circuit controls the write circuit to execute (b) applying a set of strong recovery-voltage pulses at least once to the variable resistance nonvolatile memory element, the set of strong recovery-voltage pulses including two pulses which are;

a first strong recovery-voltage pulse having a greater amplitude than the second voltage and a same polarity as the second voltage; and

a second strong recovery-voltage pulse which follows the first strong recovery-voltage pulse, and has a longer pulse width than a pulse width of the first voltage and a same polarity as the first voltage.

9. The variable resistance nonvolatile memory device according to claim 8,

wherein when it is determined in step (a) that the resistance state of the variable resistance nonvolatile memory element fails to change to the second resistance state, remaining in the first resistance state, the control circuit further controls the write circuit to execute, prior to step (b), (c) applying a set of preliminary recovery voltage pulses at least once to the variable resistance nonvolatile memory element, the set of preliminary recovery voltage pulses including two pulses which are:

a first preliminary recovery-voltage pulse having a greater amplitude than the second voltage and a same polarity as the second voltage; and

a second preliminary recovery-voltage pulse which follows the first preliminary recovery-voltage pulse and has a same polarity as the first voltage, and

the control circuit controls the write circuit to execute step (b) when the resistance state of the variable resistance nonvolatile memory element fails to change to the second resistance state after step (c).

10. The variable resistance nonvolatile memory device according to claim 9,

wherein the first preliminary recovery-voltage pulse and the first strong recovery-voltage pulse are equal in amplitude.

11. The variable resistance nonvolatile memory device according to claim 8,

wherein the control circuit further executes, using the sense amplifier, (d) determining whether the resistance state of the variable resistance nonvolatile memory element has changed to the second resistance state by the application of the second strong recovery-voltage pulse, and

the control circuit controls the write circuit and the sense amplifier so that step (b) and step (d) are repeated until the resistance state of the variable resistance nonvolatile memory element reaches the second resistance state.

12. The variable resistance nonvolatile memory device according to claim 11,

wherein when the resistance state of the variable resistance nonvolatile memory element does not change to the second resistance state after step (b) and step (d) are repeated a predetermined number of times, the control circuit controls the write circuit and the sense amplifier so that the second strong recovery-voltage pulse is changed to a new second strong recovery-voltage pulse that has a longer pulse width than the second strong recovery-voltage pulse and step (b) and step (d) are repeated a predetermined number of times.

13. The variable resistance nonvolatile memory device according to claim 8,

wherein the first transition metal oxide layer comprises a composition represented by TaO_x, and

the second transition metal oxide layer comprises a composition represented by TaO_y where x<

y.

14. The variable resistance nonvolatile memory device according to claim 8,

wherein the switching element is an MOS transistor.

15. The variable resistance nonvolatile memory device according to claim 8,

wherein the switching element is a bidirectional diode.

16. The variable resistance nonvolatile memory device according to claim 8,

wherein the variable resistance nonvolatile memory element is an element, a resistance state of which reversibly changes between a high resistance state and a low resistance state, the high resistance state being the first resistance state, the low resistance state being the second resistance state.