DEVICE AND METHOD FOR FORMING FILM

• US 20140190409A1
• Filed: 03/11/2014
• Published: 07/10/2014
• Est. Priority Date: 07/22/2009
• Status: Abandoned Application

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: MATSUMOTO, Kenji, MIYOSHI, Hidenori
• Application Number:
  US14/204,551
• Publication Number:
  US 20140190409A1
• Time in Patent Office: Days
• US Class Current: 118/715
• CPC Class Codes: C23C 16/40 Oxides
• CPC Class Codes: C23C 16/406 of iron group metals
• CPC Class Codes: C23C 16/4404 Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
• CPC Class Codes: C23C 16/45525 Atomic layer deposition [ALD]
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 21/28556 by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD H01L21/28518 - H01L21/28537 and H01L21/28568 take precedence
• CPC Class Codes: H01L 21/68742 characterised by a lifting arrangement, e.g. lift pins
• CPC Class Codes: H01L 21/68785 characterised by the mechanical construction of the susceptor, stage or support
• CPC Class Codes: H01L 21/76843 formed in openings in a dielectric
• CPC Class Codes: H01L 21/76855 After-treatment introducing at least one additional element into the layer

Abstract

The present disclosure relates to a film forming apparatus for forming a thin film on a surface of an object to be processed by using an organic metal raw material gas within a processing chamber configured to exhaust air, wherein a hydrophobic layer is installed on a surface of a member exposed to the atmosphere within the processing chamber.

Claims

1-12. -12. (canceled)

13. A film forming apparatus for forming a thin film on a surface of an object to be processed by using an organic metal raw material gas within a processing chamber configured to exhaust air,

wherein a hydrophobic layer is installed on a surface of a member exposed to the atmosphere within the processing chamber.

15. The apparatus of claim 13, wherein the member includes one or more selected from the group consisting of the processing chamber, a shower head unit configured to introduce a gas into the processing chamber, a mounting table structure configured to support the object to be processed, and a gate valve opened when the object to be processed is carried in or out of the processing chamber.

16. The apparatus of claim 13, wherein the hydrophobic layer is also formed on the interior of an exhaust pipe connected to the processing chamber.

17. The apparatus of claim 13, wherein the hydrophobic layer is configured as one layer selected from the group consisting of an SiOC layer, a fluorinated resin layer, and a hydrophobized silicon layer.

18. The apparatus of claim 13, wherein a metal included in the organic metal raw material gas is one or more metals selected from the group consisting of Mn, Nb, Zr, Cr, V, Y, Pd, Ni, Pt, Rh, Tc, Al, Mg, Sn, Ge, Ti, and Re.

19. The apparatus of claim 18, wherein the organic metal material including the Mn is one or more materials selected from the group consisting of (EtCp)₂Mn[=Mn(C₂H₅C₅H₄)₂], Cp₂Mn[=Mn(C₅H₅)₂], (MeCp)₂Mn[=Mn(CH₃C₅H₄)₂], (i-PrCp)₂Mn[=Mn(C₃H₇C₅H₄)₂], MeCpMn(CO)₃[=(CH₃C₅H₄)Mn(CO)₃], (t-BuCp)₂Mn[=Mn(C₄H₉C₅H₄)₂], CH₃Mn(CO)₅, Mn(DPM)₃[=Mn(C₁₁H₁₉O₂)₃], Mn(DMPD)(EtCp)[=Mn(C₇H₁₁C₂H₅C₅H₄)], Mn(acac)₂[=Mn(C₅H₇O₂)₂], Mn(DPM)₂[=Mn(C₁₁H₁₉O₂)₂], Mn(acac)₃[=Mn(C₅H₇O₂)₃], Mn(hfac)₂[=Mn(C₅HF₆O₂)₃], ((CH₃)₅Cp)₂Mn[=Mn((CH₃)₅C₅H₄)₂], [Mn(iPr-AMD)₂][=Mn(C₃H₇NC(CH₃)NC₃H₇)₂], and [Mn(tBu-AMD)₂][=Mn(C₄H₉NC(CH₃)NC₄H₉)₂].

14. A film forming apparatus for forming a thin film on a surface of an object to be processed by using an organic metal raw material gas and an oxygen-containing gas within a processing chamber configured to exhaust air,

wherein a hydrophobic layer is installed on a surface of a member exposed to the atmosphere within the processing chamber.

20. The apparatus of claim 14, wherein the member includes one or more selected from the group consisting of the processing chamber, a shower head unit configured to introduce a gas into the processing chamber, a mounting table structure configured to support the object to be processed, and a gate valve opened when the object to be processed is carried in or out of the processing chamber.

21. The apparatus of claim 14, wherein the hydrophobic layer is also formed on the interior of an exhaust pipe connected to the processing chamber.