NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT

• US 20140191194A1
• Filed: 08/09/2011
• Published: 07/10/2014
• Est. Priority Date: 08/09/2011
• Status: Abandoned Application

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Hwang, Seok Min, Han, Jae Ho, Kim, Jae Yoon, Ha, Hae Soo, Lee, Su Yeol, Kim, Je Won
• Application Number:
  US14/237,513
• Publication Number:
  US 20140191194A1
• Time in Patent Office: Days
• US Class Current: 257/13
• CPC Class Codes: H01L 33/14 with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate

Abstract

There is provided a nitride semiconductor light emitting device, capable of improving light extraction efficiency through a texture effect and including: a light emitting structure formed on a substrate and including a first conductivity-type nitride semiconductor layer and a second conductivity-type nitride semiconductor layer with an active layer interposed therebetween; a first electrode electrically connected to the first conductivity-type nitride semiconductor layer; a second electrode electrically connected to the second conductivity-type nitride semiconductor layer; and a light extraction pattern disposed between the first electrode and the second electrode and including a plurality of through holes formed by vertically penetrating the light emitting structure.

Claims

1. A nitride semiconductor light emitting device, comprising:

a light emitting structure formed on a substrate and including a first conductivity-type nitride semiconductor layer, a second conductivity-type nitride semiconductor layer and an active layer interposed therebetween;

a first electrode electrically connected to the first conductivity-type nitride semiconductor layer;

a second electrode electrically connected to the second conductivity-type nitride semiconductor layer; and

a light extraction pattern disposed between the first electrode and the second electrode and including a plurality of through holes formed by vertically penetrating the light emitting structure.

2. The nitride semiconductor light emitting device of claim 1, wherein the plurality of through holes are arranged in a two-dimensional structure.

3. The nitride semiconductor light emitting device of claim 1, wherein the light extraction pattern further includes at least one first separating groove formed by removing a part of the light emitting structure including at least the active layer in a band shape, and

the plurality of through holes are divided into a plurality of arrays by the first groove.

4. The nitride semiconductor light emitting device of claim 3, wherein the first separating groove is extended to the first conductivity-type nitride semiconductor layer and the second conductivity-type nitride semiconductor layer.

5. The nitride semiconductor light emitting device of claim 1, wherein the light emitting structure is a mesa-etched structure.

6. The nitride semiconductor light emitting device of claim 5, wherein the first electrode is formed on the first conductivity-type nitride semiconductor layer exposed by removing a part of the light emitting structure including at least the active layer.

7. The nitride semiconductor light emitting device of claim 5, wherein each of the plurality of through holes includes a first groove formed by removing a part of the light emitting structure including at least the active layer and at least one second groove formed by penetrating a part of the first conductivity-type nitride semiconductor layer from a bottom surface of the first groove.

8. The nitride semiconductor light emitting device of claim 7, wherein the light extraction pattern further includes a plurality of third grooves formed by penetrating the exposed first conductivity-type nitride semiconductor layer along the perimeter of the mesa-etched structure.

9. The nitride semiconductor light emitting device of claim 1, further comprising a receiving groove formed by removing a part of the light emitting structure including at least the active layer to expose the first conductivity-type nitride semiconductor layer,

wherein the first electrode is disposed on the first conductivity-type nitride semiconductor layer exposed through the receiving groove.

10. The nitride semiconductor light emitting device of claim 9, wherein the plurality of through holes are arranged in a two-dimensional structure.

11. The nitride semiconductor light emitting device of claim 9, wherein the light extraction pattern further includes a second separating groove formed by removing a part of the light emitting structure including at least the active layer in a band shape and separating the first and second electrodes from side surfaces of the light emitting structure.

12. The nitride semiconductor light emitting device of claim 11, wherein the light extraction pattern further includes a plurality of second through holes formed between the second separating groove and the side surfaces of the light emitting structure by vertically penetrating the light emitting structure.

13. The nitride semiconductor light emitting device of claim 12, wherein the plurality of second through holes are disposed along the perimeter of the light emitting structure.

14. The nitride semiconductor light emitting device of claim 13, wherein each of the plurality of through holes includes a first groove formed by removing a part of the light emitting structure including at least the active layer, and at least one second groove formed by penetrating a part of the first conductivity-type nitride semiconductor layer from a bottom surface of the first groove.

15. The nitride semiconductor light emitting device of claim 1, wherein the substrate includes a pattern formed therein.

16. The nitride semiconductor light emitting device of claim 3, wherein the light emitting structure is a mesa-etched structure.

17. The nitride semiconductor light emitting device of claim 3, further comprising a receiving groove formed by removing a part of the light emitting structure including at least the active layer to expose the first conductivity-type nitride semiconductor layer,

wherein the first electrode is disposed on the first conductivity-type nitride semiconductor layer exposed through the receiving groove.