NITRIDE SEMICONDUTOR DEVICE
First Claim
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1. A nitride semiconductor device, comprising:
- a first nitride semiconductor layer; and
an npn junction structure comprising a second nitride semiconductor layer comprising an n-type conductivity, a third nitride semiconductor layer comprising a p-type conductivity, and a fourth nitride semiconductor layer comprising an n-type conductivity layered in this order on the first nitride semiconductor layer,wherein the third nitride semiconductor layer comprises two or more uncovered regions which are uncovered with the fourth nitride semiconductor layer.
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Abstract
A nitride semiconductor device includes a first nitride semiconductor layer, and an npn junction structure including a second nitride semiconductor layer of an n-type conductivity, a third nitride semiconductor layer of a p-type conductivity, and a fourth nitride semiconductor layer of an n-type conductivity layered in this order on the first nitride semiconductor layer. The third nitride semiconductor layer includes two or more uncovered regions which are uncovered with the fourth nitride semiconductor layer.
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Citations
7 Claims
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1. A nitride semiconductor device, comprising:
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a first nitride semiconductor layer; and an npn junction structure comprising a second nitride semiconductor layer comprising an n-type conductivity, a third nitride semiconductor layer comprising a p-type conductivity, and a fourth nitride semiconductor layer comprising an n-type conductivity layered in this order on the first nitride semiconductor layer, wherein the third nitride semiconductor layer comprises two or more uncovered regions which are uncovered with the fourth nitride semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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Specification