COMPLIANT MICRO DEVICE TRANSFER HEAD

• US 20140196851A1
• Filed: 02/05/2014
• Published: 07/17/2014
• Est. Priority Date: 07/06/2012
• Status: Active Grant

• Current Assignee: Apple Inc.
• Original Assignee: LuxVue Techonology Corporation (Apple Inc.)
• Inventors: Golda, Dariusz, Bibl, Andreas
• Granted Patent: US 9,000,566 B2
• Time in Patent Office: Days
• US Class Current: 156/538
• CPC Class Codes: B32B 38/18 Handling of layers or the laminate
• CPC Class Codes: B81C 99/002 Apparatus for assembling MEMS, e.g. micromanipulators micromanipulators per se B25J7/00
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 2221/68368 used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
• CPC Class Codes: H01L 2221/68381 Details of chemical or physical process used for separating the auxiliary support from a device or wafer
• CPC Class Codes: H01L 23/5384 Conductive vias through the substrate with or without pins, e.g. buried coaxial conductors H01L23/5383, H01L23/5385 take precedence; pins attached to insulating substrates H01L23/49811
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: Y10T 156/17 Surface bonding means and/or assemblymeans with work feeding or handling means

Abstract

A compliant monopolar micro device transfer head array and method of forming a compliant monopolar micro device transfer array from an SOI substrate are described. In an embodiment, the micro device transfer head array including a base substrate and a patterned silicon layer over the base substrate. The patterned silicon layer may include a silicon interconnect and an array of silicon electrodes electrically connected with the silicon interconnect. Each silicon electrode includes a mesa structure protruding above the silicon interconnect, and each silicon electrode is deflectable into a cavity between the base substrate and the silicon electrode. A dielectric layer covers a top surface of each mesa structure.

Claims

1. A compliant transfer head array comprising:

a base substrate;

an insulating layer on the base substrate;

a patterned device layer on the insulating layer, the patterned device layer comprising;

a trace interconnect integrally formed with an array of electrodes;

wherein each electrode includes a mesa structure protruding above the trace interconnect, and each electrode is deflectable toward the base substrate; and

a dielectric layer covering a top surface of each mesa structure.

2. The compliant transfer head array of claim 1, wherein the trace interconnect runs through a working area of the compliant transfer head array including the array of electrodes.

3. The compliant transfer head array of claim 1, wherein each electrode is deflectable into a cavity in the base substrate.

4. The compliant transfer head array of claim 3, wherein each electrode is deflectable into the same cavity in the base substrate.

5. The compliant transfer head array of claim 3, wherein the cavity wraps around an end of the trace interconnect.

6. The compliant transfer head array of claim 3, wherein each electrode is deflectable into a separate cavity in the base substrate.

7. The compliant transfer head array of claim 1, further comprising a first dielectric layer covering a top surface of the trace interconnect.

8. The compliant transfer head array of claim 7, wherein the dielectric layer overlaps a top surface of the first dielectric layer.

9. The compliant transfer head array of claim 8, wherein the dielectric layer has a higher dielectric constant or dielectric breakdown strength than the first dielectric layer.

10. The compliant transfer head array of claim 1, wherein each electrode further comprises an electrode lead spanning between a corresponding mesa structure and the trace interconnect.

11. The compliant transfer head array of claim 10, wherein the electrode lead for each electrode runs perpendicular to trace interconnect.

12. The compliant transfer head array of claim 10, wherein each electrode extends from the trace interconnect in a single sided clamped cantilever beam configuration.

13. The compliant transfer head array of claim 12, wherein the patterned device layer further comprises a second trace interconnect, and each electrode further comprises a second electrode lead spanning between a corresponding mesa structure and the second trace interconnect.

14. The compliant transfer head array of claim 13, wherein each electrode extends between the trace interconnect and the second trace interconnect in a double sided clamped cantilever beam configuration.

15. The compliant transfer head array of claim 12, wherein the patterned device layer further comprise a second array of second electrodes integrally formed with the trace interconnect, wherein each second electrode includes a second mesa structure protruding above the trace interconnect, and each second electrode is deflectable toward the base substrate.

16. The compliant transfer head array of claim 15, wherein the array of electrodes and second array of second electrodes extend in opposite directions from the trace interconnect.

17. The compliant transfer head array of claim 16, wherein the array of electrodes and second array of electrodes are deflectable into a cavity in the base substrate.

18. The compliant transfer head array of claim 17, wherein the array of electrodes and second array of electrodes are deflectable into the same cavity in the base substrate.

19. The compliant transfer head array of claim 17, wherein the array of electrodes and second array of electrodes are deflectable into different cavities in the base substrate.