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THIN-FILM TRANSISTOR

  • US 20140197408A1
  • Filed: 08/08/2012
  • Published: 07/17/2014
  • Est. Priority Date: 08/11/2011
  • Status: Active Grant
First Claim
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1. A thin film transistor comprising a source electrode, a drain electrode, a gate electrode, a gate insulating film, and a channel layer that is formed of an oxide semiconductor,the channel layer having an average carrier concentration of 1×

  • 1016/cm3 to 5×

    1019/cm3, and comprising a high carrier concentration region that is situated on a side of the gate insulating film and has a carrier concentration higher than the average carrier concentration, andthe channel layer having a substantially homogeneous composition.

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