MICROELECTRONIC ASSEMBLY HAVING A HEAT SPREADER FOR A PLURALITY OF DIE

• US 20140197541A1
• Filed: 01/15/2013
• Published: 07/17/2014
• Est. Priority Date: 01/15/2013
• Status: Active Grant

• Current Assignee: NXP USA, Inc. (NXP Semiconductors NV)
• Original Assignee: Freescale Semiconductor, Inc. (NXP Semiconductors NV)
• Inventors: STEPHENS, Tab A., PELLEY, Perry H., McSHANE, Michael B.
• Granted Patent: US 9,070,653 B2
• Time in Patent Office: Days
• US Class Current: 257/772
• CPC Class Codes: H01L 21/3212 by chemical mechanical polishing [CMP]
• CPC Class Codes: H01L 21/32133 by chemical means only
• CPC Class Codes: H01L 21/76898 formed through a semiconductor substrate
• CPC Class Codes: H01L 2224/0225 Structure of the auxiliary member
• CPC Class Codes: H01L 2224/0226 Material of the auxiliary member
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/10122 being formed on the semiconductor or solid-state body to be connected
• CPC Class Codes: H01L 2224/11334 using preformed bumps
• CPC Class Codes: H01L 2224/13023 the whole bump connector protruding from the surface
• CPC Class Codes: H01L 2224/13025 the bump connector being disposed on a via connection of the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/131 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/1319 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/16113 the whole bump connector protruding from the surface
• CPC Class Codes: H01L 2224/16145 the bodies being stacked
• CPC Class Codes: H01L 2224/16146 the bump connector connecting to a via connection in the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/16245 the item being metallic
• CPC Class Codes: H01L 2224/2919 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/81801 Soldering or alloying
• CPC Class Codes: H01L 2224/81815 Reflow soldering
• CPC Class Codes: H01L 2224/9202 : Forming additional connectors after the connecting process
• CPC Class Codes: H01L 2225/06513 : Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
• CPC Class Codes: H01L 2225/06517 : Bump or bump-like direct electrical connections from device to substrate
• CPC Class Codes: H01L 2225/06541 : Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV]
• CPC Class Codes: H01L 2225/06555 : Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking
• CPC Class Codes: H01L 2225/06589 : Thermal management, e.g. cooling
• CPC Class Codes: H01L 23/3178 : Coating or filling in grooves made in the semiconductor body
• CPC Class Codes: H01L 23/34 : Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements thermal treatment apparatus H01L21/00
• CPC Class Codes: H01L 23/367 : Cooling facilitated by shape of device H01L23/38, H01L23/40, H01L23/42, H01L23/44, H01L23/46 take precedence
• CPC Class Codes: H01L 23/3677 : Wire-like or pin-like cooling fins or heat sinks
• CPC Class Codes: H01L 23/481 : Internal lead connections, e.g. via connections, feedthrough structures
• CPC Class Codes: H01L 24/05 : of an individual bonding area
• CPC Class Codes: H01L 24/11 : Manufacturing methods for bumps on insulating substrates H01L21/4853
• CPC Class Codes: H01L 24/13 : of an individual bump connector
• CPC Class Codes: H01L 24/16 : of an individual bump connector
• CPC Class Codes: H01L 24/29 : of an individual layer connector
• CPC Class Codes: H01L 24/32 : of an individual layer connector
• CPC Class Codes: H01L 24/81 : using a bump connector
• CPC Class Codes: H01L 24/92 : Specific sequence of method steps
• CPC Class Codes: H01L 25/04 : the devices not having separate containers
• CPC Class Codes: H01L 25/0657 : Stacked arrangements of devices
• CPC Class Codes: H01L 25/50 : Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00 H01L21/50 takes precedence
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/05042 : Si3N4
• CPC Class Codes: H01L 2924/05442 : SiO2
• CPC Class Codes: H01L 2924/06 : Polymers
• CPC Class Codes: H01L 2924/10253 : Silicon [Si]
• CPC Class Codes: H01L 2924/12042 : LASER
• CPC Class Codes: H01L 2924/14 : Integrated circuits

Abstract

A microelectronic assembly (100) and a microelectronic device (4100) include a stacked structure (101). The stacked structure includes a heat spreader (104), at least one die (106) thermally coupled to at least a portion of one side of the heat spreader, at least one other die (108) thermal coupled to at least a portion of an opposite side of the heat spreader, at least one opening (401) in the heat spreader located in a region of between the two die, an insulator (603) disposed in the at least one opening, and electrically conductive material (1308, 1406) in an insulated hole (705) in the insulator. The heat spreader allows electrical communication between the two die through the opening while the insulator isolates the electrically conductive material and the heat spreader from each other.

Claims

1. A microelectronic assembly, comprising:

a heat spreader having a first major surface and a second major surface opposite the first major surface;

at least one die located with respect to the first major surface of the heat spreader and thermally coupled to at least a portion of the heat spreader;

at least one other die located with respect to the second major surface of the heat spreader and thermally coupled to at least a portion of the heat spreader;

an opening in the heat spreader, the opening located in a region of the heat spreader between the at least one die and the at least one other die;

an insulator located in the opening; and

electrically conductive material located in an electrically insulated through hole in the insulator,

wherein the insulator electrically isolates the electrically conductive material and the heat spreader from each other.

2. The microelectronic assembly of claim 1, wherein the at least one die and the at least one other die are electrically coupled by the electrically conductive material in the electrically insulated through hole in the insulator disposed in the opening of the heat spreader.

3. The microelectronic assembly of claim 1, wherein the heat spreader comprises an electrically conductive material.

4. The microelectronic assembly of claim 3, wherein the heat spreader and the electrically conductive material in the electrically insulated through hole in the insulator includes a same material.

5. The microelectronic assembly of claim 1, wherein the electrically conductive material in the electrically insulated through hole in the insulator is one of a conductive epoxy and a B-staged conductive polymer.

6. The microelectronic assembly of claim 1, wherein the electrically conductive material in the electrically insulated through hole is solder.

7. The microelectronic assembly of claim 1, wherein the insulator is one of silicon dioxide, silicon nitride, and a non-electrically conductive polymer.

8. The microelectronic assembly of claim 1, wherein the at least one die includes an active side that faces the first major surface of the heat spreader, and wherein the at least one other die includes an active side that faces the second major surface of the heat spreader.

9. The microelectronic assembly of claim 1, wherein the at least one die and the at least one other die each includes at least one through via and an electrically conductive substance therein, and wherein the electrically conductive material in the electrically insulated through hole of the heat spreader is coupled to the electrically conductive substance in the through via of the at least one die and to the electrically conductive substance in the through via of the at least one other die.

10. The microelectronic assembly of claim 9, wherein at least a portion of the through via of the at least one die, at least a portion of the electrically insulated through hole in the heat spreader, and at least a portion of the through via of the at least one other die, are aligned.

11. The microelectronic assembly of claim 1, wherein one or both of the at least one die and the at least one other die each comprises a stack of die.

12. A method of manufacturing a microelectronic device, comprising:

providing a heat spreader having a first major surface and a second major surface opposite the first major surface, wherein the heat spreader has an opening, an insulator in the opening, an electrically insulated through hole in the insulator, and electrically conductive material in the electrically insulated through hole;

providing a first die and a second die, each die having a through via and an electrically conductive substance therein;

thermally coupling the first die to at least a portion of the first major surface of the heat spreader, the portion including the opening, wherein the first die is located with respect to the first major surface of the heat spreader; and

thermally coupling the second die to at least a portion of the second major surface of the heat spreader, the portion including the opening, wherein the second die is located with respect to the second major surface of the heat spreader,

wherein the electrically conductive material in the electrically insulated through hole of the heat spreader is coupled to the electrically conductive substance in the through via of the at least one die and to the electrically conductive substance in the through via of the at least one other die.

13. The method of manufacturing a microelectronic device of claim 12, including a plurality of flip chip bumps, at least one flip chip bump of the plurality of flip chip bumps electrically coupled to a through via of one or both of the first die and the second die.

14. The method of manufacturing a microelectronic device of claim 12, including a step of disposing electrically conductive material in the electrically insulated through hole.

15. The method of manufacturing a microelectronic device of claim 14, wherein the step of disposing electrically conductive material in the electrically insulated through hole comprises placing a solder ball at the electrically insulated through hole prior to thermally coupling the at least a second die to the at least a portion of the second major surface of the heat spreader.

16. The method of manufacturing a microelectronic device of claim 14, wherein the step of disposing electrically conductive material in the electrically insulated through hole comprises filling the electrically insulated through hole in the heat spreader, filling the through via of the at least a first die and filling the through via of the at least a second die with an electrically conductive continuous fill material in a continuous process subsequent to thermally coupling the at least a second die to the at least a portion of the second major surface of the heat spreader.

17. A method of manufacturing a microelectronic assembly, comprising:

providing a first die having at least one through via, the at least one through via having an electrically insulating lining and an electrically conductive substance therein, wherein a thermally conductive material is located on a surface of the first die and thermally coupled to the first die, the thermally conductive material defining an opening in the thermally conductive material, and wherein a dielectric material is located in the opening, the dielectric material defining a hole in the dielectric material, the hole including an electrically conductive material; and

thermally coupling a second die to the thermally conductive material located on the surface of the first die, the second die having at least one through via, the at least one having an electrically insulating lining, the at least one through via having an electrically conductive substance within the electrically insulating lining,

wherein the electrically conductive material in the hole is electrically coupled to the electrically conductive substance in the through via of the first die and to the electrically conductive substance in the through via of the second die.

18. The method of manufacturing a microelectronic assembly of claim 17, wherein the step of providing a first die includes:

depositing a dielectric material onto the first die;

removing the dielectric material from a portion from the first die wherein the removing leaves dielectric material that is near the at least one through via;

depositing a metal onto the first die, including on the dielectric material, the metal forming a heat spreader;

removing metal from the first die until the dielectric material is exposed;

removing a center portion of the dielectric until the electrically conductive substance within the electrically insulating lining is exposed; and

placing electrically conductive material in the hole of the dielectric material.

19. The method of manufacturing a microelectronic assembly of claim 18, wherein the step of depositing a metal onto the first die comprises depositing copper onto the first die.

20. The method of manufacturing a microelectronic assembly of claim 19, wherein the step of removing metal includes removing the copper by one of polishing, etchback, and chemical mechanical planarization.