INFORMATION HANDLING SYSTEM CHASSIS WITH ANISOTROPIC CONDUCTANCE

• US 20140198438A1
• Filed: 01/14/2013
• Published: 07/17/2014
• Est. Priority Date: 01/14/2013
• Status: Active Grant

• Current Assignee: Dell Products LP (Dell Technologies Inc.)
• Original Assignee: Dell Products LP (Dell Technologies Inc.)
• Inventors: Aurongzeb, Deeder M., Sultenfuss, Andrew T.
• Granted Patent: US 9,703,335 B2
• Time in Patent Office: Days
• US Class Current: 361/679.02
• CPC Class Codes: G06F 1/16 Constructional details or arrangements
• CPC Class Codes: G06F 1/20 Cooling means
• CPC Class Codes: G06F 1/203 for portable computers, e.g. for laptops

Abstract

An information handling system is disclosed. The information handling system comprises a chassis including a metal base, and a metal insulation layer, and a processing unit coupled to the chassis.

Claims

1. An information handling system, comprising:

a chassis comprising;

a metal base; and

a metal insulation layer; and

a processing unit coupled to the chassis.

2. The information handling system of claim 1, wherein the metal insulation layer comprises a disordered-phase composition including at least two elements from the group of bismuth, selenium, lithium, magnesium, aluminum, zinc, titanium, niobium, tantalum, vanadium, silicon, and germanium.

3. The information handling system of claim 1, wherein the metal insulation layer comprises a disordered-phase composition including bismuth and selenium.

4. The information handling system of claim 1, wherein:

the metal insulation layer comprises a disordered-phase composition of a first metal and a second metal;

the first metal includes at least one element from the group of bismuth, lithium, magnesium, aluminum, zinc, titanium, niobium, tantalum, vanadium, silicon, and germanium; and

the second metal includes a ternary alloy.

5. The information handling system of claim 4, wherein the ternary alloy comprises one of the group of magnesium-silicon-tin, magnesium-zinc-manganese, iron-vanadium-aluminum, nickel-aluminum-chromium, bismuth-silver-aluminum, and titanium-aluminum-vanadium.

6. The information handling system of claim 1, wherein the metal insulation layer comprises a diffusion bonded composition including at least two elements from the group of bismuth, selenium, lithium, magnesium, aluminum, zinc, titanium, niobium, tantalum, vanadium, silicon, and germanium.

7. The information handling system of claim 1, wherein the metal insulation layer comprises a diffusion bonded composition including bismuth and selenium.

8. The information handling system of claim 1, wherein the metal insulation layer is configured in a pattern corresponding at least to the location of the processing unit.

9. The information handling system of claim 1, wherein the chassis further comprises a reflective layer including an infrared radiation reflective material.

10. The information handling system of claim 9, wherein the infrared radiation reflective material includes silver.

11. The information handling system of claim 9, wherein the reflective layer is configured in a pattern corresponding at least to the location of the processing unit.

12. The information handling system of claim 1, wherein the chassis further comprises a thermally conductive layer configured in a pattern to route heat from a first location corresponding to the processing unit to a second location corresponding to a cooling device coupled to the chassis.

13. A method for manufacturing an information handling system chassis, comprising:

providing a metal base;

depositing a first layer comprising a first metal;

depositing a second layer comprising a second metal; and

annealing the first metal and the second metal into a disordered-phase composition; and

wherein at least one of the first metal and the second metal has a low thermal conductance.

14. The method of claim 13 for manufacturing an information handling system chassis, further comprising:

depositing a third layer comprising the first metal on the second layer; and

depositing a fourth layer comprising the second metal on the third layer.

15. The method of claim 13 for manufacturing an information handling system chassis, further comprising:

depositing an infrared-radiation reflective material on the metal base; and

annealing the infrared-radiation reflective material.

16. The method of claim 13 for manufacturing an information handling system chassis, further comprising depositing a thermally conductive layer in a pattern configured to route heat from a first location to a second location.

17. The method of claim 13 for manufacturing an information handling system chassis, wherein:

the first metal comprises a first element from the group of bismuth, selenium, lithium, magnesium, aluminum, zinc, titanium, niobium, tantalum, vanadium, silicon, and germanium; and

the second metal comprises a second element from the group of bismuth, selenium, lithium, magnesium, aluminum, zinc, titanium, niobium, tantalum, vanadium, silicon, and germanium.

18. The method of claim 13 for manufacturing an information handling system chassis, wherein:

the first metal comprises bismuth; and

the second metal comprises selenium.

19. The method of claim 13 for manufacturing an information handling system chassis, wherein:

the first metal comprises a first element from the group of bismuth, selenium, lithium, magnesium, aluminum, zinc, titanium, niobium, tantalum, vanadium, silicon, and germanium; and

the second metal includes a ternary alloy.

20. The method of claim 19 for manufacturing an information handling system chassis, wherein the ternary alloy comprises one of the group of magnesium-silicon-tin, magnesium-zinc-manganese, iron-vanadium-aluminum, nickel-aluminum-chromium, bismuth-silver-aluminum, and titanium-aluminum-vanadium.

21. A method for manufacturing an information handling system chassis, comprising:

providing a metal base;

placing a first sheet of metal laminate comprising a first metal on the base;

placing a second sheet of metal laminate comprising a second metal on the first sheet of metal laminate; and

diffusion bonding the first sheet of metal laminate and the second sheet of metal laminate.

22. The method of claim 21 for manufacturing an information handling system chassis, wherein:

diffusion bonding the first sheet of metal laminate and the second sheet of metal laminate comprises at least one of;

diffusion welding the first sheet of metal laminate and the second sheet of metal laminate; and

high current welding the first sheet of metal laminate and the second sheet of metal laminate.

23. The method of claim 21 for manufacturing an information handling system chassis, wherein:

the first metal comprises a first element from the group of bismuth, selenium, lithium, magnesium, aluminum, zinc, titanium, niobium, tantalum, vanadium, silicon, and germanium; and

the second metal comprises a second element from the group of bismuth, selenium, lithium, magnesium, aluminum, zinc, titanium, niobium, tantalum, vanadium, silicon, and germanium.

24. The method of claim 21 for manufacturing an information handling system chassis, wherein:

the first sheet of metal laminate comprises a first element from the group of bismuth and selenium; and

the second sheet of metal laminate comprises a second element from the group of bismuth and selenium.

25. An information handling system, comprising:

a chassis comprising;

a metal base; and

a reflective layer on the metal base comprising an infrared radiation reflective material; and

a processing unit coupled to the chassis.

26. The information handling system of claim 25, wherein the infrared radiation reflective material includes silver.

27. The information handling system of claim 25, wherein the reflective layer is configured in a pattern corresponding at least to the location of the processing unit.

28. A method for manufacturing an information handling system chassis, comprising:

providing a metal base;

depositing a layer of infrared-radiation reflective material on the metal base; and

annealing the layer of infrared-radiation reflective material.

29. The method of claim 28 for manufacturing an information handling system chassis, wherein annealing the layer of infrared-radiation reflective material comprises performing a rapid thermal anneal.

30. The method of claim 28 for manufacturing an information handling system chassis, wherein the infrared radiation reflective material includes silver.

31. The method of claim 28 for manufacturing an information handling system chassis, wherein the layer of infrared-radiation reflective material is deposited in a pattern corresponding at least to a location on the chassis for an infrared-radiation generating device.