SHOWER HEAD UNIT AND CHEMICAL VAPOR DEPOSITION APPARATUS

• US 20140202388A1
• Filed: 03/20/2014
• Published: 07/24/2014
• Est. Priority Date: 09/30/2008
• Status: Active Grant

• Current Assignee: Eugene Technology Co., Ltd.
• Original Assignee: Eugene Technology Co., Ltd.
• Inventors: UM, Pyung-yong
• Granted Patent: US 9,493,875 B2
• Time in Patent Office: Days
• US Class Current: 118/725
• CPC Class Codes: C23C 16/45565 Shower nozzles

Abstract

A chemical vapor deposition apparatus comprises a chamber, a chamber lead having a gas in port configured to receive a reaction gas, the chamber lead connected to a top surface of the chamber to seal up the chamber, a shower head connected to the chamber lead, the shower head having a plurality of spray holes separated from each other for spraying the reaction gas onto the surface of a wafer in the chamber, and a protrusion surrounding the spray holes on the bottom surface of the shower head so that an induction groove is provided inside the protrusion, wherein the plurality of spray holes have a plurality of main holes and a plurality of supplementary holes, each of the main holes is uniformly arranged in each corner of a square-grid pattern across the shower head and each of the supplementary holes is disposed at each centerpoint of the square-grid pattern.

Claims

1. A chemical vapor deposition apparatus comprising:

a chamber;

a chamber lead having a gas in port configured to receive a reaction gas, the chamber lead connected to a top surface of the chamber to seal up the chamber;

a shower head connected to the chamber lead, the shower head having a plurality of spray holes separated from each other for spraying the reaction gas onto the surface of a wafer in the chamber; and

a protrusion surrounding the spray holes on the bottom surface of the shower head so that an induction groove is provided inside the protrusion

wherein the plurality of spray holes have a plurality of main holes and a plurality of supplementary holes, each of the main holes is uniformly arranged in each corner of a square-grid pattern across the shower head and each of the supplementary holes is disposed at each centerpoint of the square-grid pattern,

wherein each of the supplementary holes has a supplementary exit hole having a taper angle and each of the main holes has a main exit hole having a taper angle that is wider than the taper angle of the supplementary hole so that the reaction gas sprayed through the main holes collides with the reaction gas sprayed through the supplementary holes in the induction groove, the supplementary exit hole being positioned on the lowermost of the supplementary hole and the main exit hole being positioned on the lowermost of the main hole.

2. The chemical vapor deposition apparatus of claim 1, wherein the diameter of the main exit hole and the diameter of the supplementary exit hole increase from top to bottom.

3. The chemical vapor deposition apparatus of claim 1, wherein the induction groove is extended toward the lower part.

4. The chemical vapor deposition apparatus of claim 1, wherein the plurality of spray holes have a flared shape.

5. The chemical vapor deposition apparatus of claim 1, further comprising:

a heater mounted in the chamber and disposed below the shower head, the wafer is disposed on the heater so that the reaction gas is thermally decomposed on the wafer to be deposited on the surface of the wafer as a thin film.

6. The chemical vapor deposition apparatus of claim 1, wherein the shower head has an insertion groove being formed on the top surface of the shower head and communicating with the gas in port so that the reaction gas being supplied to the insertion grove, the spray holes being formed on the bottom surface of the insertion groove,

the chemical vapor deposition apparatus further comprising:

a block plate provided on the bottom surface of the chamber lead and installed in the insertion groove, the block plate having a plurality of through holes that distribute the received reaction gas from the gas in port toward the spray holes.

7. The chemical vapor deposition apparatus of claim 1, wherein the main hole has a main entrance hole positioned on the uppermost of the main hole and a main connection hole positioned between the main entrance hole and the main exit hole, the supplementary hole has a supplementary entrance hole positioned on the uppermost of the supplementary hole and a supplementary connection hole positioned between the supplementary entrance hole and the supplementary exit hole,

wherein the main entrance hole and the main connection hole have a constant diameter to be a straight-type, the diameter of the main connection hole being larger than the diameter of the main entrance hole,

wherein the supplementary entrance hole and the supplementary connection hole have a constant diameter to be a straight-type, the diameter of the supplementary connection hole being larger than the diameter of the supplementary entrance hole.

8. The chemical vapor deposition apparatus of claim 7, wherein the supplementary entrance hole is longer than the main entrance hole, the supplementary connection hole is longer than the main connection hole, the main exit hole is longer than the supplementary exit hole.

9. The chemical vapor deposition apparatus of claim 7, wherein the diameter of the main entrance hole is equal to the diameter of the supplementary entrance hole, the diameter of the lower end of the main exit hole is larger than the diameter of the lower end of the supplementary exit hole.

10. The chemical vapor deposition apparatus of claim 1, wherein the diameter of the lower end of the main exit hole is larger than the diameter of the lower end of the supplementary exit hole, the diameter of the lower end of the supplementary exit hole being half of the length of one side of the square-grid pattern and the length of one side of the square-grid pattern being longer than the diameter of the lower end of the main exit hole.

11. The chemical vapor deposition apparatus of claim 1, wherein a lower part of the main exit holes is chamfered with a greater angle than the taper angle of the main exit holes and a lower part of the supplementary exit holes is chamfered with a greater angle than the taper angle of the supplementary exit holes.

12. A shower head unit for spraying a reaction gas onto a surface of a wafer having:

a shower head having a plurality of spray holes separated from each other for spraying the reaction gas onto the surface of a wafer; and

a protrusion surrounding the spray holes on the bottom surface of the shower head so that an induction groove is provided inside the protrusion,

wherein the plurality of spray holes have a plurality of main holes and a plurality of supplementary holes, each of the main holes is uniformly arranged in each corner of a square-grid pattern across the shower head and each of the supplementary holes is disposed at each centerpoint of the square-grid pattern,

wherein each of the supplementary holes has a supplementary exit hole having a taper angle and each of the main holes has a main exit hole having a taper angle that is wider than the taper angle of the supplementary hole so that the reaction gas sprayed through the main holes collides with the reaction gas sprayed through the supplementary holes in the induction groove, the supplementary exit hole being positioned on the lower most of the supplementary hole and the main exit hole being positioned on the lowermost of the main hole.

13. The shower head unit of claim 12, wherein the induction groove is extended toward the lower part.

14. The shower head unit of claim 12, wherein the plurality of spray holes have a flared shape.

15. The shower head unit of claim 12, wherein the shower head has an insertion groove being formed on the top surface of the shower head, the spray holes being formed on the bottom surface of the insertion groove,

the shower head unit further comprising:

a block plate installed in the insertion groove, the block plate having a plurality of through holes that distribute the received reaction gas toward the spray holes.

16. The shower head unit of claim 12, wherein the diameter of the main exit hole and the diameter of the supplementary exit hole increase from top to bottom.

17. The shower head unit of claim 12, wherein the main hole has a main entrance hole positioned on the uppermost of the main hole and a main connection hole positioned between the main entrance hole and the main exit hole, the supplementary hole has a supplementary entrance hole positioned on the uppermost of the supplementary hole and a supplementary connection hole positioned between the supplementary entrance hole and the supplementary exit hole,

wherein the main entrance hole and the main connection hole have a constant diameter to be a straight-type, the diameter of the main connection hole being larger than the diameter of the main entrance hole,

wherein the supplementary entrance hole and the supplementary connection hole have a constant diameter to be a straight-type, the diameter of the supplementary connection hole being larger than the diameter of the supplementary entrance hole.

18. The shower head unit of claim 17, wherein the supplementary entrance hole is longer than the main entrance hole, the supplementary connection hole is longer than the main connection hole, the main exit hole is longer than the supplementary exit hole.

19. The shower head unit of claim 17, wherein the diameter of the main entrance hole is equal to the diameter of the supplementary entrance hole, the diameter of the lower end of the main exit hole is larger than the diameter of the lower end of the supplementary exit hole.

20. The shower head unit of claim 12, wherein the diameter of the lower end of the main exit hole is larger than the diameter of the lower end of the supplementary exit hole, the diameter of the lower end of the supplementary exit hole being half of the length of one side of the square-grid pattern and the length of one side of the square-grid pattern being longer than the diameter of the lower end of the main exit hole.