NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE

• US 20140203293A1
• Filed: 01/22/2014
• Published: 07/24/2014
• Est. Priority Date: 01/24/2013
• Status: Abandoned Application

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: HWANG, Kyung Wook, KIM, Jung Sub, HEO, Jae Hyeok
• Application Number:
  US14/161,361
• Publication Number:
  US 20140203293A1
• Time in Patent Office: Days
• US Class Current: 257/76
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/10 with a light reflecting structure, e.g. semiconductor Bragg reflector
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/24 of the light emitting region, e.g. non-planar junction
• CPC Class Codes: H01L 33/32 containing nitrogen

Abstract

A nitride semiconductor light emitting device includes a substrate, a multi-layer structure, a light-transmitting concave-convex structure and a light emitting structure. The multi-layer structure has layers of a first layer and a second layer such that the first and second layers have different refractive indexes and are alternately stacked. The concave-convex structure is disposed in an upper surface of the multi-layer structure and includes a light-transmitting material. The light emitting structure is disposed on the multi-layer structure and includes a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer.

Claims

1. A nitride semiconductor light emitting device, comprising:

a substrate;

a multi-layer structure having layers of a first layer and a second layer, such that the first and second layers have different refractive indexes and are alternately stacked;

a light-transmitting concave-convex structure disposed in an upper surface of the multi-layer structure and including a light-transmitting material; and

a light emitting structure disposed on the multi-layer structure and including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer.

2. The nitride semiconductor light emitting device of claim 1, wherein the light-transmitting concave-convex structure includes a plurality of protrusions spaced apart from one another in the upper surface of the multi-layer structure.

3. The nitride semiconductor light emitting device of claim 2, wherein the light-transmitting material is a material selected from the group consisting of SiO_x, SiN_x, Al₂O₃, HfO, TiO₂, ZrO and alloys thereof.

4. The nitride semiconductor light emitting device of claim 2, wherein the light-transmitting concave-convex structure has one of a dome shape, a cylindrical shape, a polygonal pillar shape, a conic shape, and a polygonal pyramid shape.

5. The nitride semiconductor light emitting device of claim 1, wherein the light-transmitting concave-convex structure includes a light-transmitting material layer disposed on the multi-layer structure and including a plurality of recess parts.

6. The nitride semiconductor light emitting device of claim 5, wherein the light-transmitting material layer is a porous nitride layer.

7. The nitride semiconductor light emitting device of claim 5, wherein the light-transmitting material layer has a smaller refractive index than a refractive index value of the layer of the multi-layer structure contacting the light-transmitting material layer.

8. The nitride semiconductor light emitting device of claim 5, wherein the recess part includes an intaglio pattern having one of a dome shape, a cylindrical shape, a polygonal pillar shape, a conic shape, and a polygonal pyramid shape.

9. The nitride semiconductor light emitting device of claim 1, wherein the multi-layer structure further includes a third layer having a refractive index different from refractive indexes of the first and second layers.

10. The nitride semiconductor light emitting device of claim 1, wherein:

the first conductive semiconductor layer includes a plurality of nanocores, and

the active layer and the second conductive semiconductor layer are sequentially stacked on the nanocores.

11. The nitride semiconductor light emitting device of claim 1, wherein the multi-layer structure is a distributed brag reflector (DBR) structure.

12. The nitride semiconductor light emitting device of claim 1, wherein the first and second layers include porous GaN layers having different degrees of pore density.

13. The nitride semiconductor light emitting device of claim 1, wherein the first and second layers include n-GaN layers having different doping concentrations.

14. A nitride semiconductor light emitting device comprising:

a substrate;

a multi-layer structure disposed on the substrate and including an upper surface in which layers of a first layer and a second layer having different refractive indexes are alternately stacked and a plurality of recess parts are defined; and

a light emitting structure disposed on the multi-layer structure and including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer.

15. The nitride semiconductor light emitting device of claim 14, wherein the recess part is defined in an upper portion of the multi-layer structure.

16. A method of manufacturing nitride semiconductor light emitting device, comprising steps of:

forming a silicon substrate;

forming a multi-layer structure to have layers of a first layer and a second layer, such that the first and second layers have different refractive indexes and are alternately stacked;

forming a light-transmitting concave-convex structure in an upper surface of the multi-layer structure the light-transmitting concave-convex structure including a light-transmitting material; and

forming a light emitting structure on the multi-layer structure.

17. The method of claim 16, wherein the step of forming the light-transmitting concave-convex structure includes forming a plurality of protrusions spaced apart from one another in the upper surface of the multi-layer structure.

18. The method of claim 16, wherein the step of forming the light-transmitting concave-convex structure includes:

forming a light-transmitting material layer on the multi-layer structure; and

forming a plurality of recess parts in the light-transmitting concave-convex structure.

19. The method of claim 16, wherein the step of forming the light emitting structure includes:

forming a first conductive semiconductor layer;

forming a plurality of nanocores in the first conductive semiconductor layer; and

sequentially stacking an active layer and a second conductive semiconductor layer on the nanocore.

20. The method of claim 16, wherein the first and second layers include porous GaN layers having different degrees of pore density.