FIELD EFFECT TRANSISTOR AND SCHOTTKY DIODE STRUCTURES
First Claim
1. A structure comprising:
- an epitaxial layer disposed on a substrate including silicon carbide;
a gate trench extending into a semiconductor region of a first conductivity type;
a source region of the first conductivity type disposed on a side of the gate trench;
a shield electrode disposed in a bottom portion of the gate trench, the shield electrode being insulated from the semiconductor region by a shield dielectric layer;
a gate electrode disposed over the shield electrode in the gate trench, the gate electrode and the shield electrode having an inter-electrode dielectric layer therebetween;
a dielectric cap disposed over the gate electrode; and
a conductor layer contacting the source region and the semiconductor region such that the conductor layer forms a Schottky contact with the semiconductor region.
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Accused Products
Abstract
In accordance with an embodiment a structure can include a monolithically integrated trench field-effect transistor (FET) and Schottky diode. The structure can include a first gate trench extending into a semiconductor region, a second gate trench extending into the semiconductor region, and a source region flanking a side of the first gate trench. The source region can have a substantially triangular shape, and a contact opening extending into the semiconductor region between the first gate trench and the second gate trench. The structure can include a conductor layer disposed in the contact opening to electrically contact the source region along at least a portion of a slanted sidewall of the source region, and the semiconductor region along a bottom portion of the contact opening. The conductor layer can form a Schottky contact with the semiconductor region.
19 Citations
20 Claims
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1. A structure comprising:
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an epitaxial layer disposed on a substrate including silicon carbide; a gate trench extending into a semiconductor region of a first conductivity type; a source region of the first conductivity type disposed on a side of the gate trench; a shield electrode disposed in a bottom portion of the gate trench, the shield electrode being insulated from the semiconductor region by a shield dielectric layer; a gate electrode disposed over the shield electrode in the gate trench, the gate electrode and the shield electrode having an inter-electrode dielectric layer therebetween; a dielectric cap disposed over the gate electrode; and a conductor layer contacting the source region and the semiconductor region such that the conductor layer forms a Schottky contact with the semiconductor region. - View Dependent Claims (2, 3, 4, 5)
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6. A structure comprising:
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an epitaxial layer disposed on a substrate including silicon carbide; a gate trench extending into a semiconductor region of a first conductivity type and terminating within the epitaxial layer; a gate electrode disposed in the gate trench; a dielectric material disposed on the gate electrode; a source region of the first conductivity type disposed on a side of the gate trench, the source region having an upper surface recessed relative to an upper surface of the dielectric material disposed on the gate electrode; a body region of a second conductivity type extending along a sidewall of the gate trench between the source region and the semiconductor region; a contact opening extending into the epitaxial layer; and a conductor layer disposed in the contact opening and electrically contacting the source region, the body region, the epitaxial layer and the semiconductor region, the conductor layer forming a Schottky contact with at least a portion of the semiconductor region and the epitaxial layer. - View Dependent Claims (7, 8, 9, 10, 11, 12)
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13. A structure comprising:
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an epitaxial layer disposed on a substrate including silicon carbide; a gate trench extending into and terminating within the epitaxial layer; a gate electrode disposed in the gate trench; a dielectric material disposed on the gate electrode; a source region having at least a portion disposed on a side of the gate trench; a contact opening extending into the epitaxial layer; and a conductor layer disposed in the contact opening and electrically contacting the source region and the epitaxial layer, the conductor layer forming a Schottky contact with the epitaxial layer. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20)
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Specification