SPIRAL METAL-ON-METAL (SMOM) CAPACITORS, AND RELATED SYSTEMS AND METHODS
First Claim
1. A multilayer metal-on-metal (MoM) capacitor disposed in a semiconductor die, the multilayer MoM capacitor comprising:
- a first layer comprising;
a first electrode of the MoM capacitor coupled to a first trace, the first trace coiled in a first inwardly spiraling pattern and comprised of first parallel trace segments; and
a second electrode of the MoM capacitor coupled to a second trace, the second trace coiled inside the first inwardly spiraling pattern and comprised of second parallel trace segments interdisposed between the first parallel trace segments; and
a second layer comprising;
the second electrode of the MoM capacitor coupled to a third trace, the third trace coiled in a second inwardly spiraling pattern; and
the first electrode of the MoM capacitor coupled to a fourth trace, the fourth trace coiled inside the second inwardly spiraling pattern.
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Accused Products
Abstract
Spiral metal-on-metal (MoM or SMoM) capacitors and related systems and methods of forming MoM capacitors are disclosed. In one embodiment, a MoM capacitor disposed in a semiconductor die is disclosed. The MoM capacitor comprises a first electrode coupled to a first trace. The first trace is coiled in a first inwardly spiraling pattern and comprised of first parallel trace segments. The MoM capacitor also comprises a second electrode coupled to a second trace. The second trace is coiled in the first inwardly spiraling pattern and comprised of second parallel trace segments interdisposed between the first parallel trace segments. Reduced variations in the capacitance allow circuit designers to build circuits with tighter tolerances and generally improve circuit reliability.
8 Citations
20 Claims
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1. A multilayer metal-on-metal (MoM) capacitor disposed in a semiconductor die, the multilayer MoM capacitor comprising:
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a first layer comprising; a first electrode of the MoM capacitor coupled to a first trace, the first trace coiled in a first inwardly spiraling pattern and comprised of first parallel trace segments; and a second electrode of the MoM capacitor coupled to a second trace, the second trace coiled inside the first inwardly spiraling pattern and comprised of second parallel trace segments interdisposed between the first parallel trace segments; and a second layer comprising; the second electrode of the MoM capacitor coupled to a third trace, the third trace coiled in a second inwardly spiraling pattern; and the first electrode of the MoM capacitor coupled to a fourth trace, the fourth trace coiled inside the second inwardly spiraling pattern. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A multilayer metal-on-metal (MoM) capacitor disposed in a semiconductor die, the multilayer MoM capacitor comprising:
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a first layer comprising; a first electrode of the MoM capacitor coupled to a first conducting means, the first conducting means coiled in a first inwardly spiraling pattern and comprised of first parallel trace segments; and a second electrode of the MoM capacitor coupled to a second conducting means, the second conducting means coiled inside the first inwardly spiraling pattern and comprised of second parallel trace segments interdisposed between the first parallel trace segments; and a second layer comprising; the second electrode of the MoM capacitor coupled to a third conducting means, the third conducting means coiled in a second inwardly spiraling pattern; and the first electrode of the MoM capacitor coupled to a fourth conducting means, the fourth conducting means coiled inside the second inwardly spiraling pattern. - View Dependent Claims (10, 11)
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12. A circuit in a semiconductor die comprising a multilayer MoM capacitor, the multilayer MoM capacitor comprising:
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a first layer comprising; a first electrode of the MoM capacitor coupled to a first trace, the first trace coiled in a first inwardly spiraling pattern and comprised of first parallel trace segments; and a second electrode of the MoM capacitor coupled to a second trace, the second trace coiled inside the first inwardly spiraling pattern and comprised of second parallel trace segments interdisposed between the first parallel trace segments; and a second layer comprising; the second electrode of the MoM capacitor coupled to a third trace, third trace coiled in a second inwardly spiraling pattern; and the first electrode of the MoM capacitor coupled to a fourth trace, the fourth trace coiled inside the second inwardly spiraling pattern.
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13. A method of forming a metal-on-metal (MoM) capacitor comprising:
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providing a first mask for a semiconductor die, the first mask delimiting a first inwardly spiraling pattern; positioning the first mask on a top layer of the semiconductor die; depositing a first metal on the first mask to form a first electrode and a first trace of the MoM capacitor, the first trace formed in the inwardly spiraling pattern comprised of first parallel trace segments; providing a second mask for the semiconductor die, the second mask delimiting a second inwardly spiraling pattern; positioning the second mask on the top layer of the semiconductor die; depositing a second metal on the second mask to form a second electrode and a second trace of the MoM capacitor, the second trace formed coiled in the first inwardly spiraling pattern and comprised of second parallel trace segments interdisposed between the first parallel trace segments. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20)
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Specification