MICRO-ELECTRO MECHANICAL SYSTEM (MEMS) STRUCTURES AND METHODS OF FORMING THE SAME

• US 20140203421A1
• Filed: 04/15/2014
• Published: 07/24/2014
• Est. Priority Date: 02/17/2012
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: SHU, Chia-Pao, HUNG, Chia-Ming, TAI, Wen-Chuan, WANG, Hung-Sen, CHEN, Hsiang-Fu, KALNITSKY, Alex
• Granted Patent: US 9,266,714 B2
• Time in Patent Office: Days
• US Class Current: 257/682
• CPC Class Codes: B81B 7/0032 Packages or encapsulation processes for packaging MEMS B81C1/00261; packaging of smart-MEMS B81C1/0023
• CPC Class Codes: B81B 7/0038 using materials for controlling the level of pressure, contaminants or moisture inside of the package, e.g. getters
• CPC Class Codes: B81C 1/00261 Processes for packaging MEMS devices MEMS packages B81B7/0032, packaging of smart-MEMS B81C1/0023
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A device includes a first substrate bonded with a second substrate structure. The second substrate structure includes an outgasing prevention structure. At least one micro-electro mechanical system (MEMS) device is disposed over the outgasing prevention structure.

Claims

1. A device comprising:

a first substrate; and

a second substrate structure bonded to the first substrate, the second substrate structure comprising;

an outgasing prevention structure; and

at least one micro-electro mechanical system (MEMS) device disposed over the outgasing prevention structure.

2. The device of claim 1, wherein the outgasing prevention structure comprises at least one material selected from the group consisting of silicon nitride, silicon oxynitride, silicon carbide, silicon oxycarbide, and silicon carbon nitride.

3. The device of claim 1, wherein the first substrate comprises a stand-off portion extending through an opening of the second substrate structure and contacting a top metallic layer disposed over the outgassing prevention structure.

4. The device of claim 1, wherein the first substrate is bonded to a surface of the second substrate structure that is substantially coplanar with or closer to the first substrate than a surface of the at least one MEMS device.

5. The device of claim 1 further comprising:

a gas getter structure disposed over the outgasing prevention structure.

6. The device of claim 5, wherein the gas getter structure comprises at least one metallic material.

7. The device of claim 5, wherein the gas getter structure comprises a fuse structure.

8. The device of claim 5, wherein the gas getter structure extends onto a sidewall of a dielectric layer disposed over the outgasing prevention structure.

9. The device of claim 5, wherein the gas getter structure comprises aluminum (Al), copper (Cu), tungsten (W), cobalt (Co), platinum (Pt), silicon (Si), germanium (Ge), titanium (Ti), tantalum (Ta), gold (Au), nickel (Ni), or tin (Sn).

10. The device of claim 5, further comprising a metallic layer disposed over the outgasing prevention structure, wherein the gas getter structure is a portion of the metallic layer.

11. A micro-electro mechanical system (MEMS) structure comprising:

a first substrate structure comprising an outgasing prevention structure disposed over a dielectric material;

a second substrate structure disposed over the first substrate structure, the second substrate structure including at least one MEMS device; and

a third substrate structure disposed over the second substrate structure.

12. The structure of claim 11, wherein the outgasing prevention structure includes at least one material selected from the group consisting of silicon nitride, silicon oxynitride, silicon carbide, silicon oxycarbide, and silicon carbon nitride.

13. The structure of claim 11, wherein the third substrate structure comprises a stand-off portion extending through an opening of the second substrate structure and contacting a top metallic layer disposed over the outgasing prevention structure.

14. The structure of claim 11, wherein the third substrate structure is bonded to the second substrate structure.

15. The structure of claim 11 further comprising:

a gas getter structure disposed over the outgasing prevention structure.

16. The structure of claim 11, wherein the MEMS device is a motion sensor, a radio frequency (RF) device, an oscillator, or a microphone.

17. A method of forming a micro-electro mechanical system (MEMS) structure, the method comprising:

bonding a second substrate structure to a first substrate structure, wherein the first substrate structure comprises an outgasing prevention structure and the second substrate structure comprises at least one MEMS device; and

bonding a third substrate structure to the first substrate structure or the second substrate structure.

18. The method of claim 17, further comprising:

forming at least one gas getter structure over the outgasing prevention structure.

19. The method of claim 17, wherein bonding the second substrate structure to the first substrate structure comprises a eutectic bonding process or a fusion bonding process.

20. The method of claim 17, wherein bonding the third substrate structure to the first substrate structure or the second substrate structure comprises a eutectic bonding process or a fusion bonding process.