SEMICONDUCTOR DEVICE

• US 20140203859A1
• Filed: 01/22/2014
• Published: 07/24/2014
• Est. Priority Date: 01/24/2013
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Kato, Kiyoshi, Uesugi, Wataru
• Granted Patent: US 9,059,689 B2
• Time in Patent Office: Days
• US Class Current: 327/264
• CPC Class Codes: H03K 2005/00104 using a reference signal, e.g. a reference clock
• CPC Class Codes: H03K 2005/00241 using shift registers
• CPC Class Codes: H03K 5/05 by the use of clock signals or other time reference signals
• CPC Class Codes: H03K 5/06 by the use of delay lines or other analogue delay elements

Abstract

To provide a semiconductor device capable of adjusting the timing of a clock signal or a high-quality semiconductor device. The semiconductor device includes a first transistor and a circuit including a second transistor. A channel of the first transistor is formed in an oxide semiconductor layer. A first signal is input to one of a source and a drain of the first transistor. The other of the source and the drain of the first transistor is electrically connected to a gate of the second transistor. A first clock signal is input to the circuit. The circuit outputs a second clock signal. The timing of the second clock signal is different from that of the first clock signal.

Claims

1. A semiconductor device comprising:

a first transistor; and

a circuit including a second transistor,

wherein a channel of the first transistor is included in an oxide semiconductor layer,

wherein a first signal is input to one of a source and a drain of the first transistor,

wherein the other of the source and the drain of the first transistor is electrically connected to a gate of the second transistor,

wherein a first clock signal is input to the circuit,

wherein a second clock signal is output from the circuit, and

wherein a timing of the second clock signal is different from a timing of the first clock signal.

2. The semiconductor device according to claim 1, wherein part of the second transistor is formed in a semiconductor substrate.

3. The semiconductor device according to claim 2, wherein the oxide semiconductor layer is formed over the semiconductor substrate.

4. The semiconductor device according to claim 1, incorporated in one selected from the group consisting of a portable game console, a portable information appliance, a laptop, an electric refrigerator-freezer, a video camera, and a passenger car.

5. A semiconductor device comprising:

a first transistor; and

a second transistor,

wherein a channel of the first transistor is included in an oxide semiconductor layer,

wherein a first signal is input to one of a source and a drain of the first transistor,

wherein the other of the source and the drain of the first transistor is electrically connected to a gate of the second transistor,

wherein a first clock signal is input to one of a source and a drain of the second transistor,

wherein a second clock signal is output from the other of the source and the drain of the second transistor, and

wherein a timing of the second clock signal is different from a timing of the first clock signal.

6. The semiconductor device according to claim 5, wherein part of the second transistor is formed in a semiconductor substrate.

7. The semiconductor device according to claim 6, wherein the oxide semiconductor layer is formed over the semiconductor substrate.

8. The semiconductor device according to claim 5, incorporated in one selected from the group consisting of a portable game console, a portable information appliance, a laptop, an electric refrigerator-freezer, a video camera, and a passenger car.

9. A semiconductor device comprising:

a first transistor;

a second transistor;

a first inverter; and

a second inverter,

wherein a channel of the first transistor is included in an oxide semiconductor layer,

wherein a first signal is input to one of a source and a drain of the first transistor,

wherein the other of the source and the drain of the first transistor is electrically connected to a gate of the second transistor,

wherein a first clock signal is input to one of a source and a drain of the second transistor through the first inverter,

wherein a second clock signal is output from the other of the source and the drain of the second transistor through the second inverter, and

wherein a timing of the second clock signal is different from a timing of the first clock signal.

10. The semiconductor device according to claim 9, wherein part of the second transistor is formed in a semiconductor substrate.

11. The semiconductor device according to claim 10, wherein the oxide semiconductor layer is formed over the semiconductor substrate.

12. The semiconductor device according to claim 9, incorporated in one selected from the group consisting of a portable game console, a portable information appliance, a laptop, an electric refrigerator-freezer, a video camera, and a passenger car.

13. A semiconductor device comprising:

a first transistor;

a second transistor;

a first inverter;

a second inverter; and

a capacitor,

wherein a channel of the first transistor is included in an oxide semiconductor layer,

wherein a first signal is input to one of a source and a drain of the first transistor,

wherein the other of the source and the drain of the first transistor is electrically connected to a gate of the second transistor,

wherein a first clock signal is input to one of a source and a drain of the second transistor and to the second inverter through the first inverter,

wherein the other of the source and the drain of the second transistor is electrically connected to one of electrodes of the capacitor,

wherein a second clock signal is output from the second inverter, and

wherein a timing of the second clock signal is different from a timing of the first clock signal.

14. The semiconductor device according to claim 13, wherein part of the second transistor is formed in a semiconductor substrate.

15. The semiconductor device according to claim 14, wherein the oxide semiconductor layer is formed over the semiconductor substrate.

16. The semiconductor device according to claim 13, incorporated in one selected from the group consisting of a portable game console, a portable information appliance, a laptop, an electric refrigerator-freezer, a video camera, and a passenger car.

17. A semiconductor device comprising:

a first transistor;

a circuit including a second transistor;

a flip-flop; and

a logic circuit,

wherein a channel of the first transistor is included in an oxide semiconductor layer,

wherein an output of the logic circuit is input to a gate of the first transistor,

wherein a first signal is input to one of a source and a drain of the first transistor,

wherein the other of the source and the drain of the first transistor is electrically connected to a gate of the second transistor,

wherein a first clock signal is input to the circuit,

wherein a second clock signal is output from the circuit to the flip-flop,

wherein a second signal and an output signal of the flip-flop are input to the logic circuit, and

wherein a timing of the second clock signal is different from a timing of the first clock signal.

18. The semiconductor device according to claim 17, wherein part of the second transistor is formed in a semiconductor substrate.

19. The semiconductor device according to claim 18, wherein the oxide semiconductor layer is formed over the semiconductor substrate.

20. The semiconductor device according to claim 17, incorporated in one selected from the group consisting of a portable game console, a portable information appliance, a laptop, an electric refrigerator-freezer, a video camera, and a passenger car.