LIQUID CRYSTAL DISPLAY DEVICE
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Accused Products
Abstract
It is an object to provide a liquid crystal display device including a thin film transistor with high electric characteristics and high reliability. As for a liquid crystal display device including an inverted staggered thin film transistor of a channel stop type, the inverted staggered thin film transistor includes a gate electrode, a gate insulating film over the gate electrode, a microcrystalline semiconductor film including a channel formation region over the gate insulating film, a buffer layer over the microcrystalline semiconductor film, and a channel protective layer which is formed over the buffer layer so as to overlap with the channel formation region of the microcrystalline semiconductor film.
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Citations
20 Claims
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1. (canceled)
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2. A semiconductor device comprising:
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a substrate capable of transmitting light; a gate wiring over the substrate; a wiring over the substrate; a first capacitor wiring and a second capacitor wiring over the substrate; a first transistor comprising a first channel formation region, the gate wiring, a first source electrode, and a first drain electrode; a second transistor comprising a second channel formation region, the gate wiring, a second source electrode, and a second drain electrode; a first capacitor, one terminal of the first capacitor electrically connected to the first capacitor wiring; a second capacitor, one terminal of the second capacitor electrically connected to the second capacitor wiring; an insulating film over the first transistor, the second transistor, the first capacitor and the second capacitor, the insulating film including a first opening portion and a second opening portion; and a first sub pixel electrode and a second sub pixel electrode adjacent to the first sub pixel electrode, each of the first sub pixel electrode and the second sub pixel electrode including a slit, wherein one of the first source electrode and the first drain electrode is electrically connected to the wiring, wherein one of the second source electrode and the second drain electrode is electrically connected to the wiring, wherein the other of the first source electrode and the first drain electrode is electrically connected to the first sub pixel electrode through the first opening portion, wherein the other of the first source electrode and the first drain electrode is electrically connected to the other terminal of the first capacitor, wherein the other of the second source electrode and the second drain electrode is electrically connected to the second sub pixel electrode through the second opening portion, wherein the other of the second source electrode and the second drain electrode is electrically connected to the other terminal of the second capacitor, wherein an entire portion of a semiconductor film including the first channel formation region overlaps with the gate wiring, wherein the first sub pixel electrode including the slit overlaps an entire portion of the first opening portion, wherein the second sub pixel electrode including the slit overlaps an entire portion of the second opening portion, and wherein the semiconductor film including the first channel formation region comprises silicon. - View Dependent Claims (3, 4, 5, 6, 7, 8, 9, 10)
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11. A semiconductor device comprising:
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a substrate capable of transmitting light; a gate wiring over the substrate; a wiring over the substrate; a first capacitor wiring and a second capacitor wiring over the substrate; a first transistor comprising a first channel formation region, the gate wiring, a first source electrode, and a first drain electrode; a second transistor comprising a second channel formation region, the gate wiring, a second source electrode, and a second drain electrode; a first capacitor, one terminal of the first capacitor electrically connected to the first capacitor wiring; a second capacitor, one terminal of the second capacitor electrically connected to the second capacitor wiring; an insulating film over the first transistor, the second transistor, the first capacitor and the second capacitor, the insulating film including a first opening portion and a second opening portion; and a first sub pixel electrode and a second sub pixel electrode adjacent to the first sub pixel electrode, each of the first sub pixel electrode and the second sub pixel electrode including a slit, wherein one of the first source electrode and the first drain electrode is electrically connected to the wiring, wherein one of the second source electrode and the second drain electrode is electrically connected to the wiring, wherein the other of the first source electrode and the first drain electrode is electrically connected to the first sub pixel electrode through the first opening portion, wherein the other of the first source electrode and the first drain electrode is electrically connected to the other terminal of the first capacitor, wherein the other of the second source electrode and the second drain electrode is electrically connected to the second sub pixel electrode through the second opening portion, wherein the other of the second source electrode and the second drain electrode is electrically connected to the other terminal of the second capacitor, wherein an entire portion of a semiconductor film including the first channel formation region overlaps with the gate wiring, wherein the first sub pixel electrode including the slit overlaps an entire portion of the first opening portion, wherein the second sub pixel electrode including the slit overlaps an entire portion of the second opening portion, wherein the second sub pixel electrode overlaps the gate wiring and the second capacitor wiring, and wherein the semiconductor film including the first channel formation region comprises silicon. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification