METHOD OF MANUFACTURE FOR NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT, WAFER, AND NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT
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Abstract
In a method of manufacture for a nitride semiconductor light emitting element including: a monocrystalline substrate; and an AlN layer; and a first nitride semiconductor layer of a first electrical conductivity type; and a light emitting layer made of an AlGaN-based material; and a second nitride semiconductor layer of a second electrical conductivity type, a step of forming the AlN layer includes: a first step of supplying an Al source gas and a N source gas into the reactor to generate a group of MN crystal nuclei having Al-polarity to be a part of the AlN layer on the surface of the monocrystalline substrate; and a second step of supplying the Al source gas and the N source gas into the reactor to form the AlN layer, after the first step.
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Citations
20 Claims
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1-10. -10. (canceled)
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11. A method of manufacture for a nitride semiconductor light emitting element,
the nitride semiconductor light emitting element comprising: -
a monocrystalline substrate; an AlN layer provided on a surface of the monocrystalline substrate; a first nitride semiconductor layer of a first electrical conductivity type provided on the AlN layer; a light emitting layer made of an AlGaN-based material and provided on an opposite side of the first nitride semiconductor layer from the AlN layer; and a second nitride semiconductor layer of a second electrical conductivity type provided on an opposite side of the light emitting layer from the first nitride semiconductor layer, and the method comprising a step of forming the AlN layer on the monocrystalline substrate prepared and set in a reactor and subsequently heating the monocrystalline substrate in a range of 1000°
C. to 1150°
C. to clean the surface of the monocrystalline substrate,wherein the step comprising; a first step of supplying an Al source gas and a N source gas into the reactor to generate a group of AlN crystal nuclei having Al-polarity to be a part of the AlN layer on the surface of the monocrystalline substrate; and a second step of supplying the Al source gas and the N source gas into the reactor to form the AlN layer on the surface of the monocrystalline substrate, after the first step. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification