SEMICONDUCTOR LIGHT-EMITTING DEVICE
First Claim
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1. A semiconductor light-emitting device comprising:
- a light-emitting structure comprising a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer;
an electrode layer contacting one of the first conductive semiconductor layer and the second conductive semiconductor layer; and
a bonding conductive layer connected to the electrode layer,wherein the bonding conductive layer comprises;
a main bonding layer having a recess area defined by a stepped portion on a surface opposite to a surface facing the electrode layer; and
a filling bonding layer filling at least a part of the recess area.
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Abstract
A semiconductor light-emitting device includes a light-emitting structure that includes a first conductive semiconductor layer, an active layer, a second conductive semiconductor layer, an electrode layer contacting one of the first conductive semiconductor layer and the second conductive semiconductor layer, and a bonding conductive layer connected to the electrode layer. The bonding conductive layer includes a main bonding layer having a recess area defined by a stepped portion on a surface opposite to a surface facing the electrode layer, and a filling bonding layer filling at least a part of the recess area.
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Citations
20 Claims
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1. A semiconductor light-emitting device comprising:
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a light-emitting structure comprising a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; an electrode layer contacting one of the first conductive semiconductor layer and the second conductive semiconductor layer; and a bonding conductive layer connected to the electrode layer, wherein the bonding conductive layer comprises; a main bonding layer having a recess area defined by a stepped portion on a surface opposite to a surface facing the electrode layer; and a filling bonding layer filling at least a part of the recess area. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A semiconductor light-emitting device comprising:
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a package substrate; a first conductive semiconductor layer comprising grooves disposed in a surface facing the package substrate such that a plurality of mesa areas having a plurality of branching portions spaced apart from one another are defined; an active layer disposed on the plurality of mesa areas; a second conductive semiconductor layer disposed on the active layer; a first electrode layer connected to the second conductive semiconductor layer, on the plurality of mesa areas; a second electrode layer connected to the first conductive semiconductor layer, on bottom surfaces of the grooves; and a bonding conductive layer disposed between the package substrate and at least one of the first electrode layer and the second electrode layer, wherein the bonding conductive layer comprises; a main bonding layer having a contact surface contacting the at least one electrode layer, a mount surface opposite to the contact surface, and at least one recess area defined by stepped portions in the mount surface; and a filling bonding layer filling the at least one recess area. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16, 17)
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18. A semiconductor light-emitting device comprising:
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a substrate having an uneven pattern disposed on a first surface thereof; a first conductive semiconductor layer disposed on the uneven pattern on the first surface of the substrate, wherein the first conductive semiconductor layer comprises a plurality of grooves therein, a first mesa area that constitutes part of a first mesa structure, and a plurality of second mesa areas constituting a plurality of second mesa structures branching from the first mesa structure and wherein the second mesa areas have a plurality of branching portions which are spaced apart from one another by the grooves disposed therebetween; an active layer disposed on the first mesa area and the second mesa areas; a second conductive semiconductor layer disposed on the active layer; a first electrode layer connected to the second conductive semiconductor layer and overlapping with first mesa area and the second mesa areas; a second electrode layer extending in a longitudinal direction of the grooves on bottom surfaces of the grooves, wherein the second electrode layer includes a plurality of contacts disposed on the bottom surfaces of the grooves which connect the second electrode layer to the first conductive semiconductor layer; a first insulating layer covering sidewalls of the first mesa structure and the second mesa structures branching from the first mesa structure; a second insulating layer covering the sidewalls of the first mesa structure and the second mesa structures branching from the first mesa structure with the first insulating layer therebetween and covering a non-contact area of the first electrode layer; a first bonding conductive layer disposed on the first electrode layer and overlapping with the first mesa structure and connected to the first electrode layer via a contact area of the first electrode layer, wherein the first bonding conductive layer includes a first main bonding layer having a first recess area therein defined by a stepped portion in a surface opposite to a contact surface of the first main bonding layer contacting the first electrode layer, and a first filling bonding layer filling in the first recess area of the first main bonding layer; and a second bonding conductive layer disposed on the second electrode layer and connected to the second electrode layer through the plurality of contacts of the second electrode layer, wherein the second bonding conductive layer includes a second main bonding layer having a plurality of second recess areas disposed in a surface opposite to a surface facing the second electrode layer and defined by a stepped portion of the second mesa structures, and a plurality of second filling bond layers filling the second recess areas. - View Dependent Claims (19, 20)
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Specification