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SEMICONDUCTOR LIGHT-EMITTING DEVICE

  • US 20140209955A1
  • Filed: 12/31/2013
  • Published: 07/31/2014
  • Est. Priority Date: 01/29/2013
  • Status: Active Grant
First Claim
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1. A semiconductor light-emitting device comprising:

  • a light-emitting structure comprising a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer;

    an electrode layer contacting one of the first conductive semiconductor layer and the second conductive semiconductor layer; and

    a bonding conductive layer connected to the electrode layer,wherein the bonding conductive layer comprises;

    a main bonding layer having a recess area defined by a stepped portion on a surface opposite to a surface facing the electrode layer; and

    a filling bonding layer filling at least a part of the recess area.

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