INTEGRATED METAL OXIDE CHEMICAL SENSOR

• US 20140209983A1
• Filed: 01/22/2014
• Published: 07/31/2014
• Est. Priority Date: 01/31/2013
• Status: Abandoned Application

• Current Assignee: Sensirion AG (Sensirion Holding AG)
• Original Assignee: Sensirion AG (Sensirion Holding AG)
• Inventors: BURGI, Lukas, MAYER, Felix
• Application Number:
  US14/161,045
• Publication Number:
  US 20140209983A1
• Time in Patent Office: Days
• US Class Current: 257/253
• CPC Class Codes: G01N 27/128 Microapparatus
• CPC Class Codes: H04M 1/026 Details of the structure or mounting of specific components
• CPC Class Codes: H04M 2250/12 including a sensor for measuring a physical value, e.g. temperature or motion

Abstract

A chemical sensor is described with at least one layer of metal oxide arranged between two electrodes with the length of the layer of metal oxide between the electrodes being less than 50 microns, wherein at least one interface layer is formed between the surface of at least one of the electrodes and the layer of metal oxide and wherein the interface layer lowers the contact resistance between the electrodes and the layer of metal oxide by facilitating transport of charge carriers across layer boundaries.

Claims

1. A chemical sensor comprising at least one layer of metal oxide arranged between two electrodes with the length (L) of the layer of metal oxide between the electrodes being less than 50 microns, wherein at least one interface layer is formed between the surface of at least one of the electrodes and the layer of metal oxide and wherein the interface layer lowers the contact resistance between the electrodes and the layer of metal oxide by facilitating transport of charge carriers across layer boundaries.

2. The chemical sensor according to claim 1, wherein the interface layer includes a material which creates under static conditions a charged layer.

3. The chemical sensor according to claim 1, wherein the interface layer includes a material doped to a higher degree than the metal oxide in the metal oxide layer .

4. The chemical sensor according to claim 1, wherein the interface layer includes a material doped to a concentration level of at least 10¹⁹ cm⁻

3.

5. The chemical sensor according to claim 1, wherein the interface layer includes n-doped material.

6. The chemical sensor according to claim 1, wherein the interface layer includes material having a conduction band at a level between the Fermi level of the electrode material and the conduction band of the metal oxide.

7. The chemical sensor according to claim 1, wherein the interface layer includes material forming a dipole layer between the electrode material and the layer of metal oxide.

8. The chemical sensor according to claim 1, wherein the interface layer is composed of one or more deposits created through a direct deposition of the interface material or its precursor.

9. The chemical sensor according to claim 1, wherein the interface layer and the metal oxide layer are composed of one or more deposits created through a direct deposition process.

10. The chemical sensor according to claim 9, wherein the interface layer and the metal oxide layer are composed of one or more deposits created through the direct deposition of materials through a nozzle.

11. The chemical sensor according to claim 1, being integrated with a CMOS circuit onto a common substrate.

12. The chemical sensor according to claim 1, comprising heating elements to heat the metal oxide layer to an operating temperature, wherein the heating elements are part of a MEMS-type structure.

13. A portable electronic device comprising a chemical sensor in accordance with claim 1.

14. The portable electronic device according to claim 13, being selected from a group comprising:

a mobile phone,

a handheld computer,

an electronic reader,

a tablet computer,

a game controller,

a pointing device,

a photo or a video camera,

a digital music player,

a wrist watch,

a key fob,

a head set, and

a computer peripheral.