PHOTOCONDUCTOR-ON-ACTIVE PIXEL DEVICE
First Claim
1. A photoconductor-on-active pixel device comprising:
- a first dielectric layer disposed on an intermediary layer;
a first conductive pad portion and a first interconnect portion disposed on the first dielectric layer;
a second dielectric layer disposed on the first dielectric layer;
a first capping layer disposed on the first interconnect portion and a portion of the first conductive pad portion;
a second capping layer disposed on the first capping layer and a portion of the second dielectric layer;
an n-type doped silicon layer disposed on the second capping layer and the first conductive pad portion;
an intrinsic silicon layer disposed on the n-type doped silicon layer; and
a p-type doped silicon layer disposed on the intrinsic silicon layer.
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0 Petitions
Accused Products
Abstract
A design structure embodied in a machine readable medium used in a design process includes a first dielectric layer disposed on an intermediary layer, a first conductive pad portion and a first interconnect portion disposed on the first dielectric layer, a second dielectric layer disposed on the first dielectric layer, a first capping layer disposed on the first interconnect portion and a portion of the first conductive pad portion, a second capping layer disposed on the first capping layer and a portion of the second dielectric layer, an n-type doped silicon layer disposed on the second capping layer and the first conductive pad portion, an intrinsic silicon layer disposed on the n-type doped silicon layer, and a p-type doped silicon layer disposed on the intrinsic silicon layer.
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Citations
16 Claims
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1. A photoconductor-on-active pixel device comprising:
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a first dielectric layer disposed on an intermediary layer; a first conductive pad portion and a first interconnect portion disposed on the first dielectric layer; a second dielectric layer disposed on the first dielectric layer; a first capping layer disposed on the first interconnect portion and a portion of the first conductive pad portion; a second capping layer disposed on the first capping layer and a portion of the second dielectric layer; an n-type doped silicon layer disposed on the second capping layer and the first conductive pad portion; an intrinsic silicon layer disposed on the n-type doped silicon layer; and a p-type doped silicon layer disposed on the intrinsic silicon layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A photoconductor-on-active pixel device comprising:
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a first dielectric layer disposed on an intermediary layer; a first capping layer disposed on first dielectric layer; a first conductive pad portion and a first interconnect portion disposed on the first capping layer; a second dielectric layer disposed on the first dielectric layer; an n-type doped silicon layer disposed on the second dielectric layer, the first conductive pad portion, and the first interconnect portion; an intrinsic silicon layer disposed on the n-type doped silicon layer; and a p-type doped silicon layer disposed on the intrinsic silicon layer. - View Dependent Claims (10, 11)
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12. A design structure embodied in a machine readable medium used in a design process, the design structure comprising:
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a first dielectric layer disposed on an intermediary layer; a first conductive pad portion and a first interconnect portion disposed on the first dielectric layer; a second dielectric layer disposed on the first dielectric layer; a first capping layer disposed on the first interconnect portion and a portion of the first conductive pad portion; a second capping layer disposed on the first capping layer and a portion of the second dielectric layer; an n-type doped silicon layer disposed on the second capping layer and the first conductive pad portion; an intrinsic silicon layer disposed on the n-type doped silicon layer; and a p-type doped silicon layer disposed on the intrinsic silicon layer. - View Dependent Claims (13, 14, 15, 16)
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Specification