METHOD OF FORMING MICROPATTERN, METHOD OF FORMING DAMASCENE METALLIZATION, AND SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MEMORY DEVICE FABRICATED USING THE SAME
0 Assignments
0 Petitions
Accused Products
Abstract
According to example embodiments, a method of forming micropatterns includes forming dummy patterns having first widths on a dummy region of a substrate, and forming cell patterns having second widths on an active line region of the substrate. The active line region may be adjacent to the dummy region and the second widths may be less than the first widths. The method may further include forming damascene metallization by forming a seed layer on the active line region and the dummy region, forming a conductive material layer on a whole surface of the substrate, and planarizing the conductive material layer to form metal lines.
-
Citations
64 Claims
-
1-53. -53. (canceled)
-
54. A semiconductor device comprising:
-
a semiconductor substrate including a dummy region adjacent to an active line region, the active line region including cell trenches, the dummy region including dummy trenches; a plurality of cell lines in the cell trenches, the plurality of cell lines separated by first width; and a plurality of dummy lines in the dummy trenches, the plurality dummy lines separated by a second width that is greater than the first width. - View Dependent Claims (55, 56, 57, 58)
-
-
59. A semiconductor memory device comprising:
-
a string selection line (SSL) and a ground selection line (GSL) on a substrate; a group of wordlines extending in a first direction between the string selection line (SSL) and the ground selection line (GSL); a first bitline set and a second bit line set on the group of wordlines, the first bitline set and the second bitline set extending in a second direction, the second direction being different from the first direction, and the first bitline set and the second bitline set are electrically connected to the SSL; a common source line (CSL) that is electrically connected to the GSL; and a plurality of dummy bitlines between the first and second bitline sets, the plurality of dummy bitlines having a level that is equal to a level of the first and second bitline sets, and the dummy bitlines separated by a first distance that is greater than a second distance separating at least two bitlines of the first bitline set. - View Dependent Claims (60, 61, 62, 63)
-
-
64-67. -67. (canceled)
Specification