THIN FILM WAFER TRANSFER AND STRUCTURE FOR ELECTRONIC DEVICES

• US 20140217356A1
• Filed: 02/05/2013
• Published: 08/07/2014
• Est. Priority Date: 02/05/2013
• Status: Active Grant

• Current Assignee: International Business Machines Corporation
• Original Assignee: International Business Machines Corporation
• Inventors: CHU, JACK O., DIMITRAKOPOULOS, CHRISTOS, KIM, JEEHWAN, SADANA, DEVENDRA K., BAYRAM, CAN, PARK, HONGSIK
• Granted Patent: US 10,957,816 B2
• Time in Patent Office: Days
• US Class Current: 257/13
• CPC Class Codes: H01L 21/02378 Silicon carbide
• CPC Class Codes: H01L 21/02527 Carbon, e.g. diamond-like carbon
• CPC Class Codes: H01L 21/02612 Formation types
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/14 with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure

Abstract

An electronic device includes a spreading layer and a first contact layer formed over and contacting the spreading layer. The first contact layer is formed from a thermally conductive crystalline material having a thermal conductivity greater than or equal to that of an active layer material. An active layer includes one or more III-nitride layers. A second contact layer is formed over the active layer, wherein the active layer is disposed vertically between the first and second contact layers to form a vertical thin film stack.

Claims

1. An electronic device, comprising:

a spreading layer;

a first contact layer formed over and contacting the spreading layer and being formed from a thermally conductive crystalline material having a thermal conductivity greater than or equal to that of an active layer material;

an active layer including one or more III-nitride layers; and

a second contact layer formed over the active layer, wherein the active layer is disposed vertically between the first and second contact layers to form a vertical thin film stack.

2. The electronic device as recited in claim 1, wherein the spreading layer includes 1 to five monolayers of graphene.

3. The electronic device as recited in claim 1, wherein the active layer includes a multiple quantum well (MQW) structure.

4. The electronic device as recited in claim 1, wherein MQW structures include a plurality of GaN/InGaN periods having a total thickness of less than about 100 nm.

5. The electronic device as recited in claim 1, wherein the thermally conductive crystalline material includes SiC.

6. The electronic device as recited in claim 5, wherein the SiC includes a thickness of between about 0.3 nm and about 300 nm.

7. The electronic device as recited in claim 1, wherein the first contact layer includes GaN in contact with the thermally conductive crystalline material.

8. The electronic device as recited in claim 1, further comprising a blocking layer formed between one of the contact layers and the active layer.

10. The electronic device as recited in claim 1, wherein the first contact layer and the second contact layer are separated by a distance of 100 nm or less.

11. The electronic device as recited in claim 1, wherein the first contact layer and the second contact layer are oppositely doped and both include GaN.

12. The electronic device as recited in claim 1, wherein the spreading layer includes one of WS₂ or MoS₂.

13. The electronic device as recited in claim 1, wherein the electronic device includes one or more of a light emitting diode (LED), a transistor and/or a photonics device.

9. The electronic device as recited in claim 9, wherein the blocking layer includes AlGaInN.

14. An electronic device, comprising,

a two-dimension material spreading layer having a thickness of 1-5 monolayers;

a first contact layer formed over and contacting the spreading layer and being formed from a SiC crystalline material; and

an active layer including a multiple quantum well (MQW) structure including a plurality of III-nitride periods and having a total thickness of less than about 100 nm; and

a second contact layer formed over the active layer, wherein the active layer is disposed vertically between the first and second contact layers to form a vertical light emitting diode (LED).

15. The electronic device as recited in claim 14, wherein the SiC crystalline material includes a thickness of between about 0.3 nm and about 300 nm.

16. The electronic device as recited in claim 14, wherein the first contact layer includes GaN in contact with the SiC crystalline material.

17. The electronic device as recited in claim 14, further comprising a blocking layer formed of AlGaInN between one of the contact layers and the active layer.

18. The electronic device as recited in claim 17, wherein the blocking layer is formed of AlGaInN.

19. The electronic device as recited in claim 14, wherein the first contact layer and the second contact layer are separated by a distance of 100 nm or less.

20. The electronic device as recited in claim 14, wherein the first contact layer and the second contact layer are oppositely doped and include GaN.

21. The electronic device as recited in claim 14, wherein the III-nitride periods include a plurality of GaN/InGaN periods.

22. A substrateless electronic device, comprising:

a first contact layer formed from a thermally conductive SiC crystalline material having a thermal conductivity greater than or equal to that of an active layer material;

an active layer including one or more III-nitride layers in contact with the first contact layer; and

a second contact layer formed over the active layer, wherein the active layer is disposed vertically between the first and second contact layers to form a vertical thin film stack.

23. The electronic device as recited in claim 22, wherein the active layer includes a multiple quantum well (MQW) structure.

24. The electronic device as recited in claim 22, wherein MQW structures include a plurality of GaN/InGaN periods having a total thickness of less than about 100 nm.

25. The electronic device as recited in claim 22, wherein the first contact layer and the second contact layer are separated by a distance of 100 nm or less.