ACTIVE MATRIX IMAGE SENSING PANEL AND APPARATUS

• US 20140217399A1
• Filed: 01/28/2014
• Published: 08/07/2014
• Est. Priority Date: 02/05/2013
• Status: Active Grant

• Current Assignee: Innocare Optoelectronics Corporation (InnoLux Corporation)
• Original Assignee: Innocom Technology Limited, InnoLux Corporation
• Inventors: WU, Chih-Hao, CHOU, Cheng-Hsu
• Granted Patent: US 9,276,025 B2
• Time in Patent Office: Days
• US Class Current: 257/43
• CPC Class Codes: G06F 1/1626 with a single-body enclosure integrating a flat display, e.g. Personal Digital Assistants [PDAs]
• CPC Class Codes: H01L 27/14603 Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
• CPC Class Codes: H01L 27/14609 Pixel-elements with integrated switching, control, storage or amplification elements scanning details of imagers (circuitry of solid-state image sensors H04N25/00); circuitry of imagers H04N25/70
• CPC Class Codes: H01L 27/14663 Indirect radiation imagers, e.g. using luminescent members
• CPC Class Codes: H01L 27/14665 Imagers using a photoconductor layer

Abstract

An active matrix image sensing panel comprises a substrate and an image sensing pixel. The image sensing pixel is disposed on the substrate and comprises a scan line, a data line crossing the scan line, a photo sensing element and a TFT element. The photo sensing element includes a first terminal electrode and a second terminal electrode, and the voltage of the first terminal electrode is higher than that of the second terminal electrode. The TFT element includes a first electrode, a second electrode, a first gate electrode and a second gate electrode. The first electrode is electrically connected to the data line, the second electrode is electrically connected to the first terminal electrode, the first gate electrode is electrically connected to the scan line, and the second gate electrode is electrically connected to the first or second terminal electrode. An active matrix image sensing apparatus is also disclosed.

Claims

1. An active matrix image sensing panel, comprising:

a substrate; and

an image sensing pixel disposed on the substrate and comprising;

a scan line;

a data line crossing the scan line;

a photo sensing element including a first terminal electrode and a second terminal electrode, wherein the voltage of the first terminal electrode is higher than that of the second terminal electrode; and

a thin-film transistor (TFT) element including a first electrode, a second electrode, a first gate electrode and a second gate electrode, wherein the first electrode is electrically connected to the data line, the second electrode is electrically connected to the first terminal electrode of the photo sensing element, the first gate electrode is electrically connected to the scan line, and the second gate electrode is electrically connected to the first terminal electrode or second terminal electrode of the photo sensing element.

2. The active matrix image sensing panel as recited in claim 1, wherein the second terminal electrode is electrically connected to a reference voltage, and the reference voltage has a negative polarity.

3. The active matrix image sensing panel as recited in claim 1, wherein the photo sensing element further includes a first semiconductor layer, an intrinsic semiconductor layer and a second semiconductor layer, and the intrinsic semiconductor layer is disposed between the first semiconductor layer and the second semiconductor layer.

4. The active matrix image sensing panel as recited in claim 3, wherein the first semiconductor layer and the second terminal electrode electrically connect to each other, and the second semiconductor layer and the first terminal electrode electrically connect to each other.

5. The active matrix image sensing panel as recited in claim 1, wherein the TFT element further includes a channel layer including an oxide semiconductor, the oxide semiconductor includes an oxide, and the oxide includes at least one of indium, zinc and tin.

6. The active matrix image sensing panel as recited in claim 1, wherein the second gate electrode is electrically connected to the second terminal electrode through a conductive layer.

7. The active matrix image sensing panel as recited in claim 1, wherein the second gate electrode extends from over the TFT element to over the photo sensing element and contacts the second terminal electrode directly.

8. The active matrix image sensing panel as recited in claim 1, wherein the second gate electrode and the first terminal electrode are the same layer, and at least a portion of the first terminal electrode extends from the photo sensing element to over the TFT element.

9. The active matrix image sensing panel as recited in claim 1, wherein at least a portion of the first terminal electrode extends from the photo sensing element to over the TFT element and contacts the second gate electrode directly.

10. An active matrix image sensing apparatus, comprising:

an active matrix image sensing panel, comprising;

a substrate; and

an image sensing pixel disposed on the substrate and comprising;

a scan line;

a data line crossing the scan line;

a photo sensing element including a first terminal electrode and a second terminal electrode, wherein the voltage of the first terminal electrode is higher than that of the second terminal electrode; and

a thin-film transistor (TFT) element including a first electrode, a second electrode, a first gate electrode and a second gate electrode, wherein the first electrode is electrically connected to the data line, the second electrode is electrically connected to the first terminal electrode of the photo sensing element, the first gate electrode is electrically connected to the scan line, and the second gate electrode is electrically connected to the first terminal electrode or second terminal electrode of the photo sensing element; and

a processing module electrically connected to the scan lines and data lines of the active matrix image sensing panel.

11. The active matrix image sensing apparatus as recited in claim 10, wherein the second terminal electrode is electrically connected to a reference voltage, and the reference voltage has a negative polarity.

12. The active matrix image sensing apparatus as recited in claim 10, wherein the photo sensing element further includes a first semiconductor layer, an intrinsic semiconductor layer and a second semiconductor layer, and the intrinsic semiconductor layer is disposed between the first semiconductor layer and the second semiconductor layer.

13. The active matrix image sensing apparatus as recited in claim 12, wherein the first semiconductor layer and the second terminal electrode electrically connect to each other, and the second semiconductor layer and the first terminal electrode electrically connect to each other.

14. The active matrix image sensing apparatus as recited in claim 10, wherein the TFT element further includes a channel layer including an oxide semiconductor, the oxide semiconductor includes an oxide, and the oxide includes at least one of indium, zinc and tin.

15. The active matrix image sensing apparatus as recited in claim 10, wherein the second gate electrode is electrically connected to the second terminal electrode through a conductive layer.

16. The active matrix image sensing apparatus as recited in claim 10, wherein the second gate electrode extends from over the TFT element to over the photo sensing element and contacts the second terminal electrode directly.

17. The active matrix image sensing apparatus as recited in claim 10, wherein the second gate electrode and the first terminal electrode are the same layer, and at least a portion of the first terminal electrode extends from the photo sensing element to over the TFT element.

18. The active matrix image sensing apparatus as recited in claim 10, wherein at least a portion of the first terminal electrode extends from the photo sensing element to over the TFT element and contacts the second gate electrode directly.